Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

Abstract

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

Impact of A-Cations Modified on the Structural, Electronic, Optical, Mechanical, and Solar Cell Performance of Inorganic Novel A3NCl3 (A = Ba, Sr, and Ca) Perovskites

“…Figure d elucidates that the maximum conversion efficiency has been achieved of 28.81%, with thickness ranges of 100–3000 nm and interface defect density up to 10 11 cm –3 . When high-defect states are introduced into the absorber layer, the cell’s overall performance decreases as a result of an increased rate of carrier recombination. ,− A constant thickness of 1000 nm for the Ba 3 NCl 3 absorber layer and an interface defect intensity of 10 11 cm –3 have been found to be the best combination of parameters for achieving the maximum possible V OC of 0.948 V. At these voltages, the solar cell produced an FF of 79.91%, a J SC of 38.26 mA/cm 2 , and a PCE of 28.81%. The values of V OC , J SC , FF, and PCE decrease for Al/FTO/SnS 2 /Sr 3 NCl 3 /Au structures as the interface defect density increases and increase the PV performances as the thickness of the absorber layer increases.…”

Design and analysis of a SnS2/WS2/V2O5 double-heterojunction toward high-performance photovoltaics

“…Because the BSF layer is designed to reduce recombination at the back surface of the cell, it can also affect the G-R profile near the front surface, which is consistent with previous reports. 66 Total (electron and hole) generation at the absorber thickness of B1.0 mm was found to be the maximum, and on the contrary, resulted in the least total recombination loss.…”

Improving the Efficiency of a New Perovskite Solar Cell Based on Sr3SbI3 by Optimizing the Hole Transport Layer

“…It is known which aligned band energy between the metal contact and absorber interface has the least band offset. Since the buffer layer is designed to stop recombination at the front (back) of the surface cell, it may have an effect on the G–R profile on the front surface . However, an adjusted total generation–recombination at an absorber thickness around 1.0 μm was obtained with the least recombination at fixed acceptor concentration N A of 10 18 cm –2 and density of defect N t of 10 12 cm –2 .…”