Analysis of Breakdown Voltages in AlGaN/GaN HEMTs With Low-${k}$ /High-${k}$  Double Passivation Layers

Nakamura, Kai; Hanawa, Hideyuki; Horio, K.

doi:10.1109/tdmr.2019.2903213

Cited by 18 publications

(6 citation statements)

References 23 publications

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“…18(a [43] . In 2019, Islam et al [49] proved that the heavy ion irradiation induces device damages by creating lattice defects, and accelerate degradations of the GaN HEMT under tests (CGHV1J006D, manufactured by Wolfspeed); on the other hand, a gate injection triggers impact ionization in the channel, thus inducing failures under the OFF-state. A HEMT just after the failure at V D = 10.2 V is shown in Fig.…”

Section: Irradiation Effectmentioning

confidence: 99%

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

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Section: Irradiation Effectmentioning

confidence: 99%

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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show abstract

“…Numerous alternative methods have also been introduced, such as Gd 2 O 3 36,37 and multi-layer dielectric stack structures. 38,39 The recessed gate HEMT has a reduced AlGaN thickness under the gate (see Fig. 5b).…”

Section: Gan Transistor Structurementioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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“…This improved the performance of OTFTs by better controlling the interfacial properties, despite the increase in the total dielectric thickness. 33 , 35 For instance, M. Yi fabricated high-performance field-effect transistors using PMMA and crosslinked poly(4-vinylphenol) (PVP) for a double insulating layer. 33 Meanwhile, Nakamura developed high-performance field-effect transistors with SiN as the upper layer and HfO 2 , La 2 O 3 , LaLuO 3 , or TiO 2 as the lower layer for double-insulator transistors.…”

Section: Introductionmentioning

confidence: 99%