Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim, Namjee; Yu, Jingshu; Zhang, Weijia; Li, Rophina; Wang, Mengqi; Ng, Wai Tung

doi:10.1007/s11664-020-08284-7

Cited by 13 publications

(3 citation statements)

References 85 publications

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“…Therefore, GaN material is more suitable for the fabrication of highly efficient power electronic devices under the same voltage level, especially for the lateral high electron mobility transistors (HEMTs). Its on-resistance is usually 1-2 orders of magnitude lower than that of Si-based power devices and reduced by 1/2-1/3 compared to SiC-based power devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Progress of GaN-based E-mode HEMTs

Huang,

Lei,

Sun

2024

J. Phys. D: Appl. Phys.

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With the continuous improvement of the power density and operating frequency in power conversion systems, it is necessary to develop the new power electronic products with better performances than the conventional semiconductors. As a typical representative of the wide-bandgap semiconductors, gallium nitride (GaN)-based heterostructure has unique high-density two-dimensional electron gas (2DEG) and hence can be used to fabricate the fast high electron mobility transistors (HEMTs) with low power loss. Therefore, they are considered as a promising candidate for the next-generation power devices to improve the switching efficiency and speed. Compared with the depletion mode (D-mode, also known as normally-on) devices, the enhancement-mode (E-mode, also known as normally-off) devices have the advantages of safety, energy-saving, and better circuit topology design, making them more attractive for industry applications. In this paper, the different structure schemes and fabrication technologies of the GaN-based E-mode HEMTs are reviewed and summarized. Their technical characteristics are systematically compared. The influences of material epitaxial structure, ohmic contact, material etching, field plate design, and passivation process on the device performances are discussed in detail wherein the fabrication process of the recessed-gate MIS-HEMTs are emphatically illustrated, focusing on the interface treatment technology and dielectric engineering. In addition, the complicated reliability issues and physical mechanisms in the E-mode HEMTs induced by high temperature, high voltage, and high frequency switching are introduced and discussed. Finally, the potential technical solutions are proposed and the future application fields of GaN-based E-mode HEMTs are prospected.

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Section: Introductionmentioning

confidence: 99%

Progress of GaN-based E-mode HEMTs

Huang,

Lei,

Sun

2024

J. Phys. D: Appl. Phys.

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“…SiC has a clear advantage in high voltage (higher than 1200 V) applications, while GaN prevails in power conversion and high-frequency work. In particular, GaN-based HEMTs, which generate a high concentration of two-dimensional electron gas (2DEG) at the heterostructural interface and have on resistance 30% to 50% lower than SiC devices [3,4], are ideal for the next generation of high-frequency, high-power power electronics applications. It can be widely used in all kinds of electronic products, new energy vehicles, industrial applications, 5G communication and other important fields.…”

Section: Introductionmentioning

confidence: 99%

Research Progress and Development Prospects of Enhanced GaN HEMTs

et al. 2023

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With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High Electron Mobility Transistors (HEMTs) show great advantages in frequency, gain, and noise performance. With the continuous advancement of material growth technology, the epitaxial growth of semiconductor heterojunction can accurately control doping level, material thickness, and alloy composition. Consequently, HEMTs have been greatly improved from material structure to device structure. Device performance has also been significantly improved. In this paper, we briefly describe MOCVD growth technology and research progress of GaN HEMT epitaxial films, examine and compare the “state of the art” of enhanced HEMT devices, analyze the reliability and CMOS compatibility of GaN devices, and look to the future directions of possible development.

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“…AlN also has a very high thermal conductivity, which is crucial for heat removal in high-power devices [2]. Currently, AlN films and AlGaN heterostructures are absolutely necessary elements (buffer, transition and capping layers) of high electron mobility transistors and GaN-based diodes [3][4][5]. AlN thin layers are also used in the production of piezoelectric and energy harvesting devices [6,7].…”

Section: Introductionmentioning

confidence: 99%

Growth of Thin AlN Films on Si Wafers by Reactive Magnetron Sputtering: Role of Processing Pressure, Magnetron Power and Nitrogen/Argon Gas Flow Ratio

Sandager

Kjelde²,

Popok

2022

Crystals

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AlN is a wide band gap semiconductor that is of growing industrial interest due to its piezoelectric properties, high breakdown voltage and thermal conductivity. Using magnetron sputtering to grow AlN thin films allows for high deposition rates and uniform coverage of large substrates. One can also produce films at low substrate temperatures, which is required for many production processes. However, current models are inadequate in predicting the resulting structure of a thin film when different sputter parameters are varied. In this work, the growth of wurtzite AlN thin films has been carried out on Si(111) substrates using reactive direct current magnetron sputtering. The influence of the processing pressure, magnetron power and N2/Ar ratio on the structure of the grown films has been analyzed by investigating crystallinity, residual film stress and surface morphology using X-ray diffraction, profilometry, atomic force microscopy and scanning electron microscopy. In every case, the films were found to exhibit c-axis orientation and tensile stress. It was found that high-quality AlN films can be achieved at an N2/Ar ratio of 50% and a low pressure of 0.2 Pa. High magnetron powers (900–1200 W) were necessary for achieving high deposition rates, but they led to larger film stress.

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Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Cited by 13 publications

References 85 publications

Progress of GaN-based E-mode HEMTs

Progress of GaN-based E-mode HEMTs

Research Progress and Development Prospects of Enhanced GaN HEMTs

Growth of Thin AlN Films on Si Wafers by Reactive Magnetron Sputtering: Role of Processing Pressure, Magnetron Power and Nitrogen/Argon Gas Flow Ratio

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