Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

Abstract

In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on siliconon-insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba 0.7 Sr 0.3 T iO 3 (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.