Analysis of chemical ordering and fragility for Ge–Se–In glasses

Fouad, S.S.; El-Bana, M.S.; Sharma, Pankaj; Sharma, Vineet

doi:10.1007/s00339-015-9180-6

Cited by 42 publications

(7 citation statements)

References 42 publications

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“…As noticed from results, the (m opt ) and (r opt ) decreased when film thickness increased. That performance is accorded with other previous researches [47].…”

Section: R E T R a C T E Dsupporting

confidence: 92%

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Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Saeedy

Yakout

Mahmoud

et al. 2020

Eur. Phys. J. Appl. Phys.

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The assembly of earth-abundant and low-cost kieserite thin films is important to produce inexpensive solar cells. Here, uniform, crystalline CCSS (CCTS) (Cu2CdSnS4) thin films (tf) were prepared atop of well wiped cut-glass substrate through chemical spray pyrolysis performance with different thickness at 450 oC. The structural characteristics of the CCSS tf have been premeditated by the X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and EDAX analysis. The difference values of the structural constants of CCSS films were examined with the film thickness. The optical observations point that the CCSS films show a direct allowed optical transition and decreased when thickness of the film increased. The opto electrical characterizations such as photosensitive carrier concentration, the optical mobility or resistivity, and relaxation time of the CCSS films were determined. The thickness 385 nm of the CCSS tf was elected to be exhausted in fabricate of the Ag/ n-Si/ CCSS/ Au hetero junction because they have highest magnitudes of absorption coefficient and optical conductivity. The hypothetical CCSS/ n-type Si hetero junction had conversion efficiency (CO) of 1.54 %.

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“…As noticed from results, the (m opt ) and (r opt ) decreased when film thickness increased. That performance is accorded with other previous researches [47].…”

Section: R E T R a C T E Dsupporting

confidence: 92%

“…The dielectric constants (e 1 ), the real part, (e 2 ) the imaginary part of CCTS 4 thin films were evaluated from the extinction coefficient (k) and refractive index (n) magnitudes through the equations [47,48]:…”

Section: Optoelectronic Characterization 241 Dielectric Constantsmentioning

confidence: 99%

Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Saeedy

Yakout

Mahmoud

et al. 2020

Eur. Phys. J. Appl. Phys.

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“…The assessed values of E g th are depicted in Table 3 and are observed to decrease as Sn-content is increased. These results are supported by the decrease in average single bond energy defined by the ratio of < H s > to< r > [26]. The values of average single bond energy are also found to decrease with the incorporation of Sn.…”

Section: Theoretical Bandgap and Average Heat Of Atomizationmentioning

confidence: 58%

EFFECT OF Sn INCORPORATION ON STRUCTURAL, PHYSICAL AND ELECTRICAL PROPERTIES OF Ge-Se-Sb-Sn THIN FILMS

Kang¹,

Kotnala²,

Tripathi³

2020

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The present work reports the analysis of physical, structural and electrical properties alongwiththeir compositional dependence for (Ge20Se80)90-xSb10Snx (x = 2, 4, 6, 10 at %) chalcogenide glassy system. XRDspectra show the amorphous nature of the prepared samples with the possibility of short-range ordering in the samples. Chemically ordered network model, consistent with (8− N) rule, has been utilizedin estimating various physical parameters which reveals that Ge-Se-Sb-Sn glassy systems are thermally stable glasses. The current transport mechanisms have been investigated as a function of temperature in the temperature range 293 K− 363 K revealing thatthe dc-conduction occurs through an activated process with single activation energy. Meyer-Neldel rule is found to be obeyed. The present study suggests Ge-Se-Sb-Sn glassy system to be an optimal material for utilization in optical devices.

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“…From the tabulated values, it is found that T g increases with an increase in rigidity of the system, degree of cross linking and average bond strength. Hence, we interpret that the observed variation of glass transition temperature with Bi content is due to the dependence of T g on the connectivity [33]. Inset in Fig.…”

Section: Correlation Between Mean Bond Energy E and Glass Transition mentioning

confidence: 59%

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

Sharma

Sunder

2018

Materials Science-Poland

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Glass forming ability of lone-pair semiconductors was analyzed for (x = 0, 2, 4, 6, 8, 10) system. Values of lone pair electrons L were calculated using average coordination number of valence electrons. These values were found to decrease, as the system was moving towards the rigid region. L > 3 values showed vitreous state. Deviation of the stoichiometry confirmed the chalcogen-rich region. A linear correlation was found between the mean bond energy and glass transition temperature. Chemical Bond Approach model was applied to calculate the cohesive energy of the system. A linear relationship was found to exist between the cohesive energy and the theoretical band gap, calculated using Shimakawa relation. A decrease in both parameters was explained on the basis of average stabilization energy and electronegativity of the system. The density values were found to increase and may account for higher refractive index of the system. Large Bohr radius of the Bi atom accounted for an increase in the polarizability. Other parameters viz. degree of covalency, packing density, compactness, molar volume, free volume percentage, excess volume and polaron radius were also calculated. An effort was made to correlate the effect of Bi addition to Ge12Se76 - xAs12Bixlone-pair semiconductor on the basis of the structure of the glassy matrix or the connectedness of the material.

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Analysis of chemical ordering and fragility for Ge–Se–In glasses

Cited by 42 publications

References 42 publications

Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

EFFECT OF Sn INCORPORATION ON STRUCTURAL, PHYSICAL AND ELECTRICAL PROPERTIES OF Ge-Se-Sb-Sn THIN FILMS

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

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Analysis of chemical ordering and fragility for Ge–Se–In glasses

Cited by 42 publications

References 42 publications

Assembly of efficient Ag/n-Si/Cu2CdSnS4/Au for photovoltaic cell utilities

Assembly of efficient Ag/n-Si/Cu2CdSnS4/Au for photovoltaic cell utilities

EFFECT OF Sn INCORPORATION ON STRUCTURAL, PHYSICAL AND ELECTRICAL PROPERTIES OF Ge-Se-Sb-Sn THIN FILMS

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge12Se76-xAs12Bixglassy semiconductors

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Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors