Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

Aouassa, Mansour; Jadli, Imen; Hassayoun, L.; Maâref, H.; Panczer, G.; Favre, Luc; Ronda, A.; Berbézier, Isabelle

doi:10.1016/j.spmi.2017.10.003

Cited by 7 publications

(1 citation statement)

References 32 publications

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“…Additionally, the intensity of the Si-Ge modes is observed to peak above 408 cm -1 . This contrasts with the growth of SiGe on a PSi substrate, where the corresponding mode was observed at lower frequencies (<400 cm -1 ), as reported in the previous study [31]. These results can be attributed to the inner microstructure properties of annealed DPSi.…”

Section: Resultscontrasting

confidence: 67%

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

Gouder,

Mahamdi,

Guiza

et al. 2023

RCMA

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Previous investigations into SiGe alloys using Raman spectroscopy have generated significant uncertainties regarding the relationships between shifts in Raman peak frequencies and stress. Furthermore, these studies did not establish precise correlations when examining alloys on porous substrates. These substrates have emerged as promising candidates in the highly competitive field of adaptable substrates for epitaxial growth of heterogeneous systems (such as III-V, SiGe, etc.) on Silicon (Si). Among these porous materials, double porous silicon (DPSi) has recently garnered attention, featuring a low porosity upper layer atop a buried high porosity layer. However, during a heat treatment, the upper low-porosity layer transforms into a quasi-monocrystalline Si layer, making it suitable for high-quality epitaxial growth. In this work, we present the first investigation of the vibrational properties of the Si1-xGex membranes grown on top of annealed DPSi, using Raman spectroscopy. We systematically propose new relationships linking the Raman peak shift to Ge concentration and strain, using a set of experimental equations derived from the peak positions of the Si-Si, Si-Ge, and Ge-Ge modes.

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Section: Resultscontrasting

confidence: 67%