2017
DOI: 10.1016/j.egypro.2017.09.256
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Analysis of contact recombination at rear local back surface field via boron laser doping and screen-printed aluminum metallization on p-type PERC solar cells

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Cited by 11 publications
(1 citation statement)
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“…In these solar cells, metal-semiconductor (MS) contacts are made on the heavily doped Si regions. This results in high recombination current densities at the metalized areas (J0,metal), which range from about a few hundred to a few thousand fA/cm 2 depending on the cell technology [5][6][7][8]. The high J0,total caused by a full-area rear MS contact in Al-BSF solar cells is addressed by implementing local contact structures in the PERC [9] and PERT [10] cells.…”
Section: Introductionmentioning
confidence: 99%
“…In these solar cells, metal-semiconductor (MS) contacts are made on the heavily doped Si regions. This results in high recombination current densities at the metalized areas (J0,metal), which range from about a few hundred to a few thousand fA/cm 2 depending on the cell technology [5][6][7][8]. The high J0,total caused by a full-area rear MS contact in Al-BSF solar cells is addressed by implementing local contact structures in the PERC [9] and PERT [10] cells.…”
Section: Introductionmentioning
confidence: 99%