2013
DOI: 10.5120/14562-2670
|View full text |Cite
|
Sign up to set email alerts
|

Analysis of Conventional CMOS and FinFET based 6-T XOR-XNOR Circuit at 45nm Technology

Abstract: As technology has scaled down, the implications of leakage current and power analysis for memory design have increased. To minimize the short channel effect Double-gate FinFET can be used in place of conventional MOSFET circuits due to the self-alignment of the two gates. Design for XOR and XNOR circuits is suggested to improve the speed and power. These circuits act as basic building blocks for many arithmetic circuits. This paper contrasts and evaluates the performance of conventional CMOS and FinFET based X… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2014
2014
2014
2014

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 19 publications
0
0
0
Order By: Relevance