Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability

Das, Debaprasad; Rahaman, Hafizur

doi:10.1109/tnano.2011.2146271

Cited by 71 publications

(37 citation statements)

References 20 publications

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“…The aggressor nets are switched while victim net is held at logic high for overshoot/undershoot analysis. The signal waveform at the input of the load is analyzed and using (18) and (19) the effective electric field and average failure rate is calculated with the help of a Matlab script.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…Using (19) we can calculate the average failure rate of the MOS devices. Table 3 lists the gate oxide reliability parameters [13] used for the analysis.…”

Section: Signal Integrity and Gate Oxide Reliability Analysis In Mwcnmentioning

confidence: 99%

“…The work in [17] analyzes crosstalk overshoot/undershoots in SWCNT bundle based interconnect systems, and finds its superiority over Cu based interconnect systems in terms of gate oxide reliability. In [19] the authors investigate the impact of crosstalk on gate oxide reliability for MWCNT interconnects. The work in [18] has investigated the performance of CNT interconnects at the system level, and it is reported that MWCNT has much lower delay as compared to SWCNT bundle based systems.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, a mixed CNT bundle is a better choice for future on-chip interconnects considering the limitations of CNT growth process. The work in [19] considers only single MWCNT for interconnect which does not meet the predicted aspect ratio (∼ 2) of interconnects according to the ITRS [1]. In this work we model different form of MWCNT bundle, and perform crosstalk overshoot/undershoot analysis to investigate its impact on gate oxide reliability.…”

Section: Introductionmentioning

confidence: 99%

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Crosstalk overshoot/undershoot analysis and its impact on gate oxide reliability in multi-wall carbon nanotube interconnects

Das

Rahaman

2011

J Comput Electron

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The work in this paper analyzes the crosstalk effects in Multi-wall Carbon Nanotube (MWCNT) based interconnect systems, and its impact on the reliability of the gate oxide of MOS devices. The electrical circuit parameters for interconnect are calculated using the existing models of MWCNT and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk induced overshoot/undershoots have been estimated and the effect of the overshoot/undershoots on the gate oxide reliability is calculated in terms of failure-in-time (FIT) rate of the MOS devices. Single, double, and bundle of MWCNTs are considered for the analysis. The results are compared with that of traditional Cu based interconnects. It has been found that the average failure rate due to crosstalk overshoot/undershoots is ∼ 10 to 100 times less in MWCNT based interconnect of length between 10 μm to 50 μm as compared to the copper based interconnects. Our analysis shows the applicability of MWCNTs in future VLSI circuits from the perspective of gate oxide reliability. The results also reveal that single or double MWCNT of large diameter is better than bundle of MWCNTs of smaller diameter.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

“…Using (19) we can calculate the average failure rate of the MOS devices. Table 3 lists the gate oxide reliability parameters [13] used for the analysis.…”

Section: Signal Integrity and Gate Oxide Reliability Analysis In Mwcnmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Crosstalk overshoot/undershoot analysis and its impact on gate oxide reliability in multi-wall carbon nanotube interconnects

Das

Rahaman

2011

J Comput Electron

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“…Parasitic elements, includes mutual inductive and capacitive effect generated between adjacent interconnects, makes crosstalk phenomenon. Crosstalk is an extra serious matter in VLSI circuits due to adverse effects such as, overshoot/undershoot [12], delay [13,14], glitch [13]. Therefore, crosstalk makes serious problem for reliable operation of an interconnect application.…”

mentioning

confidence: 99%

Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects

Bagheri

Ranjbar

Haji-Nasiri

et al. 2015

Microelectronics Reliability

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Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Kumar

Sarkar

2014

Circuit Theory & Apps

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The temperature‐dependent, crosstalk‐induced, noise voltage waveform and its frequency spectrum, in capacitive coupled single‐walled carbon nanotube (SWCNT) bundle interconnects, at the far end of victim line, have been analyzed at 22‐nm technology node. A similar analysis is performed for copper interconnects and a comparison is made between the results of these two analyses. The SPICE simulation results reveal that at temperature variations ranging from 300 to 500 K, compared with conventional metal (copper) conductors, crosstalk noise voltage levels in CNT, at the far end of victim line, are significantly low. Simulated results further reveal that, with rise in interconnect temperatures, compared with copper interconnects, coupled interconnects of SWCNT bundle filter more noise frequency components. Based on these comparative results, an improved model for extracting inter‐bundle, real life, coupling capacitances between SWCNT bundles has been proposed. Copyright © 2014 John Wiley & Sons, Ltd.

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Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability

Cited by 71 publications

References 20 publications

Crosstalk overshoot/undershoot analysis and its impact on gate oxide reliability in multi-wall carbon nanotube interconnects

Crosstalk overshoot/undershoot analysis and its impact on gate oxide reliability in multi-wall carbon nanotube interconnects

Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects

Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

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