Analysis of current aggregation in gate-control dual direction silicon controlled rectifier

Abstract

The current aggregation mechanism created by the gate structure is proposed for electrostatic discharging (ESD). Through device simulation, the size-expanded gate structure in gate-control dual-direction silicon controlled rectifier (GC-DDSCR) is found to aggregate the surface parasitic current path and the main SCR current path. The SCR current path is consequently twisted and extended to increase the holding voltage (Vh). Two GC-DDSCRs are fabricated in a 0.5μm CMOS technology and tested by transmission line pulse (TLP). The Vh increases from 13.84V to 16.44V as the gate size expands from 2.5μm to 4.5μm. The mechanism of current aggregation is verified.

A Compact Rectenna for 5g Mobile Communications

“…For 5G 2-10 watt power is required since gain obtained by antenna that is rf power is effectively converted to DC power .A silicon controlled recti er is designed with 2.5kiloohm resistance and 7microfarad capacitor connected with a thyristor of 0.7v forward biasing voltage. Designing has been done possible by Simulink [20].…”