Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-<i>k</i> Passivation Layer

Tomita, Ryuji; Ueda, S.; Kawada, Toshiyuki; Mitsuzono, H.; Horio, K.

doi:10.1109/ted.2021.3060353

Cited by 15 publications

(6 citation statements)

References 29 publications

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“…According to the demonstrated dependence, the optimal value of anode-to-cathode distance is 7 µm, as a compromise between high breakdown voltage and I F and low I R . This L AC is sufficient to achieve peak diode reverse voltage 300 V. The obtained dependence is in complete agreement with results, earlier reported in [17,18,20,23,29].…”

Section: Resultssupporting

confidence: 92%

“…According to the demonstrated dependence, the optimal value of anode-to-cathode distance is 7 μm, as a compromise between high breakdown voltage and IF and low IR. This LAC is sufficient to achieve peak diode reverse voltage 300 V. The obtained dependence is in complete agreement with results, earlier reported in [17,18,20,23,29] The normalized average results of LFP1 influence on IF, IR and C of SBDs, which were calculated the same way as above, are shown in Figure 3b. It was found that an increase in LFP1 in the range 1 μm to 3.5 μm leads to a decrease in the reverse currents of the diode.…”

Section: Resultssupporting

confidence: 90%

“…Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28]. To date, quite a lot of design features have been reported regarding SBDs, and most of reported results have used field plates for efficient electric field redistribution between anode and cathode, and increasing the diode's breakdown voltage (V BR ) [16]; increasing anode-to-cathode distance leads to an increase in the diode's resistance in the ON-state (R ON ) and V BR [29]. Tt is also a known fact that subanode recess is mandatory to create an SBD with low reverse leakage current (I R ) and low threshold voltage (V ON ) [15,16,18,19].…”

Section: Introductionmentioning

confidence: 99%

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The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

2021

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

2021

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“…Passivation layer plays a critical role in device performance and reliability which is known to have the ability to alter known defects such as reducing current leakage [1] [2] and improving breakdown voltage [3] [4]. It is not limited to the properties of a narrow bandgap, high dielectric constant and high band off-set in order to improve AlGaN/GaN HEMT device performance.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Electrical Performance of AlN and HfO<sub>2 </sub>Passivation Layer in AlGaN/GaN HEMT

Zulkifli

Ali

Falina

et al. 2023

KEM

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Different material thickness with medium and high dielectric constant can impact the performance and reliability of high electron mobility transistor device. With varying the thickness of the passivation layer, the effect of it towards the device performance is still unclear. Two different insulator layers with a medium dielectric and a high dielectric constant namely Aluminium Nitride and Hafnium Oxide are used as passivation layer in AlGaN/GaN HEMT. Both material performance was simulated via COMSOL software by varying the thickness and the drain current output were compared. The passivation layer thickness of 10nm at Vds=6 V and Vgs=5 V, HfO2 outperforms AlN with the output drain current of 39 mA compared to 35 mA respectively. It was observed that HfO2 can attain higher threshold voltage, Vth as compared to the AlN because of the influence of its material properties that shows a direct proportional relationship between Vth and dielectric constant. Using high dielectric constant material like HfO2, we observe the ON-voltage gradually decreases as the thickness of the passivation layer increased. Out of all the thickness simulated for HfO2 and AlN, 10nm produced the highest drain current output instead of layer thickness of 20nm.

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“…11,12 Extending of the field plate gate towards drain can further uniformly distribute the electric field in the channel which leads to further improvement in Breakdown voltage (V B ), but scales-down the device Transconductance (Gm). [13][14][15] To improve DC performance the channel resistance can be reduced to the limit of ∼1 ohms/mm. 16 The GaN HEMTs device with a p + doped buffer design limits the lattice mismatch due to Silicon Carbide (SiC) substrate effect.…”

mentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

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In this research work, design of the extended field plate length (E-FPL) t-gate with Fe-doped AlGaN buffer structure on the graded aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed. The gate length of 60 nm with an ExFPL up to 50 nm towards the drain shows remarkable improvement in breakdown voltage. Meanwhile, the drain current and transconductance is further improved by the Fe-doped AlGaN Buffer design. In radio frequency (RF) small signal analysis this device exhibits a peak current-gain cutoff frequency fT of 148 GHz. This device has improved transconductance of 24% with high frequency. It is highly compatible with military applications such as RF upstream transmitters, ship and aircraft communication transmitters and high-frequency radars (HFRs).

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Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer

Cited by 15 publications

References 29 publications

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

Comparison of the Electrical Performance of AlN and HfO<sub>2 </sub>Passivation Layer in AlGaN/GaN HEMT

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

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