Analysis of depth profile for impurity concentration in Si wafer by synchrotron radiation excited total reflection X-ray fluorescence spectroscopy

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

“…The accuracy of the method is however strongly influence by the distribution of the impurities in the layer, as demonstrated for residual Cl analysis in HfO 2 layers deposited in an atomic layer deposition process [109]. Other applications are in the characterization of implants in Si substrates in different methods, going from direct analysis over combination with chemical etching or physical sputtering and grazing incidence methods [115][116][117][118][119][120][121].…”