Analysis of different techniques for low power Single Edge Triggered Flip Flops

Khan, Imran Ahmed; Shah, Owais Ahmad; Beg, Mirza Tariq

doi:10.1109/wict.2011.6141447

Cited by 6 publications

(1 citation statement)

References 11 publications

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“…1 using Khan et al (2011) describes about Power Personal Computing 603 Flip flop and Mathan et al (2013) describes about modified single edge triggered delay Flip flop, depicts such that it is efficient and reliable comparing all sorts of designs. It is basically a Master Slave flip flop structure and it consists of two data paths.…”

Section: Proposed Low Power Single Edge Triggered D-flip Flopmentioning

confidence: 99%

Ultra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect Transistor

Thiyagarajan¹

2013

American Journal of Applied Sciences

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Carbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide Semiconductor Field Effect Transistor will result in performance degradation. In this study, an ultra low power Single Edge Triggered Delay Flip Flop and shift registers are designed using 10 nanometre Carbon Nano Tube Field Effect Transistor. The Carbon Nano Tube Field Effect Transistor is an efficient device to supplant the current Complementary Metal Oxide Semiconductor technology for its excellent electrical properties. The high electron and hole mobility of semiconductor nano tubes, their compatibility with high k gate dielectrics, enhanced electrostatics, reduced short channel effects and ability to readily form metal ohmic contacts make these miniaturized structures an ideal material for high performance, nanoscale transistors. To evaluate the performance of Ultra low power Single Edge Triggered Delay Flip Flop and shift registers using 10 nanometer Carbon Nano Tube Field Effect Transistor technology, the results are depicted by analyzing average power, delay, power delay product, rise time and fall time using HSPICE at 1GHz operating frequency.

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Section: Proposed Low Power Single Edge Triggered D-flip Flopmentioning

confidence: 99%