Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode

Güllü, H. H.; Sirin, D. Seme; Yıldız, D. E.

doi:10.1007/s11664-021-09254-3

Cited by 8 publications

(3 citation statements)

References 65 publications

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“…Notably, the ϕ B increases and η decreases with increasing temperature. This behavior is commonly reported in the SBDs based on Ni/β-Ga 2 O 3 [30], Au/SiC [31], and AlGaN/GaN [32] structures. Researchers claimed that this behavior can be interpreted by pure thermionic [30].…”

Section: Resultssupporting

confidence: 71%

“…Researchers claimed that this behavior can be interpreted by pure thermionic [30]. Moreover, η characterizes the spatial inhomogeneity at the metal-semiconductor (MS) interface and a larger η indicates the uneven MS interface [31,[33][34][35]. Therefore, it can be concluded that the inhomogeneity of the Schottky contacts increases with the temperature rising.…”

Section: Resultsmentioning

confidence: 99%

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Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Shi¹,

Xiang²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

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In this work, the oxidized metal PtOx was employed as the Schottky contact metal in the fabrication of GaN-on-GaN vertical SBDs. Compared with the GaN SBD with just Pt Schottky anode, the Pt/PtOx/Pt-GaN SBDs exhibited a substantial reduction in reverse leakage current density (J_R ) from 5.2×10−6 A·cm-2 to 5.6×10−9 A·cm-2 (@ -50 V) and a large rise in the breakdown voltage (V_BD) from 152 V to 368 V, as well as maintaining the similar on-state characteristics in terms of turn-on voltage and on resistance. The temperature-dependent current-voltage characteristics of the fabricated devices further revealed that the Pt/PtOx/Pt-GaN SBDs possessed a higher Schottky barrier height and better high-temperature stability. Such an improvement should be attributed to the electric dipole effect in the PtOx layer. Moreover, the additional thin Pt layer between PtOx and GaN almost have no influence on the electric dipole effect of PtOx but can effectively protect the GaN surface from plasma damage and oxidation during the PtOx deposition. We believe that the proposed Pt/PtOx/Pt-GaN Schottky contact scheme provides a straightforward and effective strategy to develop next-generation GaN power electronic devices.

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Section: Resultssupporting

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Shi¹,

Xiang²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

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show abstract

“…First, set the offset in all improved deep reinforcement learning network structures to 0. Then, the weight of the convolution layer in the network structure is initialized and analyzed to ensure that the final weight calculation results conform to the Gaussian distribution [5]. The minimum value of Gaussian distribution is 0, and the maximum value is calculated as follows:…”

Section: Reinforcement Learning Recognition Modelmentioning

confidence: 99%

Jumping Action Recognition for Figure Skating Video in IoT Using Improved Deep Reinforcement Learning

Zhou²

2023

ITC

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Figure skating video jumping action is a complex combination action, which is difficult to recognize, and the recognition of jumping action can correct athletes’ technical errors, which is of great significance to improve athletes’ performance. Due to the recognition effect of figure skating video jumping action recognition algorithm is poor, we propose a figure skating video jumping action recognition algorithm using improved deep reinforcement learning in Internet of things (IoT). First, IoT technology is used to collect the figure skating video, the figure skating video target is detected, the human bone point features through the feature extraction network is obtained, and centralized processing is performed to complete the optimization of the extraction results. Second, the shallow STGCN network is improved to the DSTG dense connection network structure, based on which an improved deep reinforcement learning action recognition model is constructed, and the actionrecognition results are output through the deep network structure. Finally, a confidence fusion scheme is established to determine the final jumping action recognition result through the confidence is established. The results show that this paper effectively improves the accuracy of figure skating video jumping action recognition results, and the recognition quality is higher. It can be widely used in the field of figure skating action recognition, to improve the training effect of athletes.

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Frequency effect on electrical and dielectric performance of Au/n–GaAs structure with RF sputtering MoO3 interfacial layer

Çetinkaya

2022

J Mater Sci: Mater Electron

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Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode

Cited by 8 publications

References 65 publications

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Jumping Action Recognition for Figure Skating Video in IoT Using Improved Deep Reinforcement Learning

Frequency effect on electrical and dielectric performance of Au/n–GaAs structure with RF sputtering MoO3 interfacial layer

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