2022
DOI: 10.1088/1361-6641/ac65aa
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Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Abstract: In this work, the oxidized metal PtOx was employed as the Schottky contact metal in the fabrication of GaN-on-GaN vertical SBDs. Compared with the GaN SBD with just Pt Schottky anode, the Pt/PtOx/Pt-GaN SBDs exhibited a substantial reduction in reverse leakage current density (J_R ) from 5.2×10−6 A·cm-2 to 5.6×10−9 A·cm-2 (@ -50 V) and a large rise in the breakdown voltage (V_BD) from 152 V to 368 V, as well as maintaining the similar on-state characteristics in terms of turn-on voltage and on resistance. The … Show more

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Cited by 3 publications
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“…New metallization schemes or advanced field plate structures have been proposed to reduce the leakage current in vertical Schottky diodes on homoepitaxial GaN epilayers. [16,17,18].…”
Section: Introductionmentioning
confidence: 99%
“…New metallization schemes or advanced field plate structures have been proposed to reduce the leakage current in vertical Schottky diodes on homoepitaxial GaN epilayers. [16,17,18].…”
Section: Introductionmentioning
confidence: 99%