Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Greco, Giuseppe; Fiorenza, Patrick; Schilirò, Emanuela; Bongiorno, Corrado; Franco, Salvatore Di; Coulon, Pierre-Marie; Frayssinet, Éric; Bartoli, Florian; Giannazzo, Filippo; Alquier, Daniel; Cordier, Y.; Roccaforte, Fabrizio

doi:10.1016/j.mee.2023.112009

Cited by 4 publications

(2 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The experimental values of A* for the implanted and non-implanted diodes were found to be 2 A cm −2 K −2 and 0.23 A cm −2 K −2 , respectively. This underestimation of Richardson's constant from the ideal value could be explained by the presence of inhomogeneous distribution of the Schottky barrier and has been extensively studied before for Schottky-GaN contacts [31][32][33][34][35][36]. Due to the inhomogeneity in the barrier, the electrons at a higher temperature had sufficient energy to overcome a higher barrier, thus increasing In the above calculation of barrier height, A* was assumed to be constant at 26.4 A cm −2 K −2 .…”

Section: Forward Biasmentioning

confidence: 99%

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

et al. 2023

Self Cite

View full text Add to dashboard Cite

We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured JR-VR-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

show abstract

Section: Forward Biasmentioning

confidence: 99%

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Alternatively, current variation maps are acquired at a given applied voltage by scanning the AFM tip in contact mode across a defined sample surface area [5]. Owing to its versatility and high resolution in probing the local conductivity of materials, C-AFM has been extensively used in studying semiconductors [6,7], two-dimensional materials [8][9][10], memristive devices [11][12][13][14][15], photoelectric systems [16][17][18], dielectric films [19][20][21][22][23], molecular electronics [24][25][26][27][28][29], organic and biological systems [30][31][32][33][34], and quantum devices [35][36][37]. Various technical methods have been developed in C-AFM to cope with the diversity of its applications, including advanced sensors and lownoise preamplifiers [2,[38][39][40].…”

Section: Introductionmentioning

confidence: 99%

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

Piquemal,

Kaja,

Chrétien

et al. 2023

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

Measuring resistances at the nanoscale has attracted recent attention for developing microelectronic components, memory devices, molecular electronics, and two-dimensional materials. Despite the decisive contribution of scanning probe microscopy in imaging resistance and current variations, measurements have remained restricted to qualitative comparisons. Reference resistance calibration samples are key to advancing the research-to-manufacturing process of nanoscale devices and materials through calibrated, reliable, and comparable measurements. No such calibration reference samples have been proposed so far. In this work, we demonstrate the development of a multi-resistance reference sample for calibrating resistance measurements in conductive probe atomic force microscopy (C-AFM) covering the range from 100 Ω to 100 GΩ. We present a comprehensive protocol for in situ calibration of the whole measurement circuit encompassing the tip, the current sensing device, and the system controller. Furthermore, we show that our developed resistance reference enables the calibration of C-AFM with a combined relative uncertainty (given at one standard deviation) lower than 2.5% over an extended range from 10 kΩ to 100 GΩ and lower than 1% for a reduced range from 1 MΩ to 50 GΩ. Our findings break through the long-standing bottleneck in C-AFM measurements, providing a universal means for adopting calibrated resistance measurements at the nanoscale in the industrial and academic research and development sectors.

show abstract

Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices

Roccaforte,

Vivona,

Greco

et al. 2025

Comprehensive Semiconductor Science and Technology

View full text Add to dashboard Cite

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Cited by 4 publications

References 29 publications

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices

Contact Info

Product

Resources

About