Analysis of E-Field Distributions within High-Power Devices Using IBIC Microscopy

Zmeck, M.; Balk, L.J.; Heiderhoff, R.; Osipowicz, T.; Watt, F.; Phang, J.C.H.; Khambadkone, A.M.; Niedernostheide, F.‐J.; Schulze, Hans‐Joachim

doi:10.1109/ispsd.2005.1487994

Cited by 9 publications

(3 citation statements)

References 4 publications

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“…Semiconductor devices for pulsed applications can be divided in turn-on and turn-off devices. Turn-on devices are thyristors (SCR's) and in the group of turn-off devices we find the GTO's (Gate Turn-Off Thyristor), IGCT's (Integrated Gate Controlled Thyristor) and IGBT's (Insulated Gate Bipolar Transistor) [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Pulse power switch centered on SCR for the launch system

Tang

et al. 2011

2011 International Conference on Electrical Machines and Systems

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The phase control thyristor is adopted as the block switch for the linear induction motor of the launch system. However, both the static and dynamic parameters of the thyristor are diffused, i.e., the gate trigger voltage and current, the holding current, the on-state voltage drop, the leakage current, and the circuit-commutated turn-off time, which will give direct influence to the development and application of the block switch of the launch system. Some measures to reduce the bad effect induced by the diffusion characteristics of these parameters are proposed. The method of screening specification, the design criterion of the width, the peak, and the modulation frequency of the drive pulse for the thyristors are provided centered on the experimental results, which will give help to the construction of the block switches of the launch system.

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Section: Introductionmentioning

confidence: 99%

Pulse power switch centered on SCR for the launch system

Tang

et al. 2011

2011 International Conference on Electrical Machines and Systems

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“…However, the drawback is that delay, rise, and fall times of beam-induced pulses vary with distances between generation points and detection contacts. Failure analyses and reliability measurements of local electronic properties inside advanced device structures and semiconductor materials can only be performed by acquiring induced currents within the time domain (Zmeck et al 2005). Even for well-known particular DUT structures, an excessive data processing is required in order to calculate the E-field strength for each spatial point.…”

Section: Introductionmentioning

confidence: 99%

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

2008

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Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.

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“…With increasing electric field, the rise and fall times as well as the transit time of measured EBIC pulses reduce, as long as the mobility of the charge carriers remains constant [11,12]. Therefore, design failures, such as inhomogeneities of electrical fields, can only be identified by extensively acquiring EBIC within the time domain and comprehensive post data processing [12].…”

Section: Introductionmentioning

confidence: 99%