2015
DOI: 10.1109/jphotov.2014.2388073
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Analysis of Fine-Line Screen and Stencil-Printed Metal Contacts for Silicon Wafer Solar Cells

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Cited by 32 publications
(23 citation statements)
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“…Typical Ag front grid metallisation of a Si solar cell covers about 6-10% of the total area using an Hpattern with busbars and perpendicular fingers. One approach to reduce the metallisation induced recombination losses is to use a dual print approach for the front side metallisation, wherein the busbars are printed using a less aggressive paste (which causes minimum damage to the SiN x coating) and also by printing finer fingers using stencils [8] or using advanced printing methods.…”
Section: Introductionmentioning
confidence: 99%
“…Typical Ag front grid metallisation of a Si solar cell covers about 6-10% of the total area using an Hpattern with busbars and perpendicular fingers. One approach to reduce the metallisation induced recombination losses is to use a dual print approach for the front side metallisation, wherein the busbars are printed using a less aggressive paste (which causes minimum damage to the SiN x coating) and also by printing finer fingers using stencils [8] or using advanced printing methods.…”
Section: Introductionmentioning
confidence: 99%
“…At each node, the current density is given by J = J sc ( x , y ) − J R ( V ( x , y )), with J R ( V ( x , y )) = J 01 [exp( qV ( x , y )/ kT ) − 1] + J 02 [exp( qV ( x , y )/2 kT ) − 1], where J 01 and J 02 are the saturation current densities in the two‐diode model. Following Reference , J sc = 40.2 mA/cm 2 in the regions not covered by the front grid, and J 01 = 730 fA/cm 2 , and J 02 = 30 nA/cm 2 throughout the cell plane. The nodes are interconnected by resistors with values as appropriate for the sheet resistance of the region that the triangular element resides.…”
Section: Modelmentioning
confidence: 95%
“…The Pareto distribution and the fitted parameters constitute the most detailed description of non‐uniform metal line conductance to date. To recapitulate from Reference , the Pareto distribution is given by leftPσshort,i=()σshort,iσshort,italicioα;whereσshort,iσshort,io=()2σshort,ioσshort,iσshort,italicioα;whereσshort,i<σshort,io where σ short, i is the line conductance (in S‐cm) of the short unit segments of 250 µm segment length, with σ short, io being the mean and α a power law scaling factor. The smaller the scaling factor, the larger is the spread in the data.…”
Section: Modelmentioning
confidence: 99%
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