Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

Impact of Light Soaking on p‐Type Boron‐ and Indium‐Doped Passivated Emitter and Rear Solar Cells on Czochralski‐Grown Silicon

“…However, there is ≈15 mV drop in V oc after the screen printed metallization compared with the calculated iV oc values of B‐ and In‐doped devices. These drop in V oc values after screen printed metallization are comparable to values reported in the literature …”

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

“…This explains the largest portion of the 110 fA/cm 2 recombination current density enlargement between solar cell precursor and finished solar cell. The J 0e,met of the Ag paste on phosphorous doped surfaces might be even higher [19]. Otherwise, an enlarged recombination current density beneath the busbars (as compared to the recombination in the passivated regions) could also further enlarge the J 01 of the finished solar cells.…”

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

“…The saturation current density at the rear metal contacts ( J 0,metal ) and in the passivated regions ( J 0,pass ) after screen‐printing and firing, as determined using Griddler 2.5 (extracted by finding a common set of J 0 parameters that fit the Suns‐PL curves of the sample with varying metal fractions), are also presented in Table . A very low J 0,metal of 20 fA/cm 2 at the rear metal fingers indicates a significant reduction in recombination at the metal contacts when compared with a standard screen‐printed contact on diffused n + Si .…”