Analysis of Gate Delay Scaling in In_0.7Ga_0.3As-Channel High Electron Mobility Transistors

Abstract

As every year, the speaker presenting the concluding remarks has the problem of the wealth of too many interesting presentations. It is not easy to select just a few topics among many fascinating ones and any choice will be, necessarily, arbitrary. This year, I decided to make brief comments on astrophysical neutrinos, on cosmology and on gamma-ray bursts. My personal nomination for the hits of the conference goes this year to the giant flare of SGR 1806-20 (27.12.2004), which threw a new light not only on magnetars, but possibly also on a certain class of short gamma-ray bursts and to GRB 050509b − possibly the first short gamma-ray burst with a measured distance.

InP and GaN high electron mobility transistors for millimeter-wave applications

“…Fig. 5 shows the intrinsic and parasitic gate delay time of two types of InP-based HEMTs, namely, In 0.53 Ga 0.47 As-channel HEMTs and In 0.7 Ga 0.3 As-channel HEMTs, as a function of the gate length [27]. In both types of HEMTs, the parasitic gate delay is not reduced very much as the gate length is scaled down.…”

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

“…However, the current gain cutoff frequency (f T ) does not scale up as much as we expected. The gate delay time analysis of the HEMTs revealed the key role of the parasitic gate delay time [3]. In general, T-gate electrodes are employed for short-gate HEMTs to reduce the gate resistance and thereby to increase the maximum frequency of oscillation (f max ).…”

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

“…However, the current gain cutoff frequency (f T ) does not scale up as much as we expected. The gate delay analysis of the HEMTs revealed the key role of the parasitic gate delay [3]. In general, T-gate electrodes are employed for short-gate HEMTs to reduce the gate resistance and thereby to increase the maximum frequency of oscillation (f max ).…”