Analysis of Heat-Treated 6H-SiC(0001) Surface Using   Scanning   Tunneling Microscopy

Marumoto, Y.; Tsukamoto, Takeshi; Hirai, Masaaki; Kusaka, M.; Iwami, Motohiro; Ozawa, Takehiro; Nagamura, Toshihiko; Nakata, Takao

doi:10.1143/jjap.34.3351

Cited by 19 publications

(9 citation statements)

References 8 publications

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“…8 In view of this apparent importance of the surface structure for SiC growth, several investigations of its geometric structure and morphology have been carried out using low-energy electron diffraction (LEED) experiments [9][10][11] or scanning tunneling microscopy (STM). 10,[12][13][14][15][16][17] In our own earlier studies 10,12 of a 6H-SiC(0001) sample with STM we have found the surface morphology to be governed by step bunching into triple or multiples of triple steps. This is in complete accordance with our LEED structure analysis of the same surface 11 where we found only ABCACB stacking present on the surface.…”

Section: Sic Growth Polytypes and Surface Morphologymentioning

confidence: 99%

Atomic Structure of Hexagonal 6H– and 3C–SiC Surfaces

et al. 1998

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The crystallography of hexagonal SiC surfaces prepared ex situ by chemical methods was investigated by low energy electron diffraction (LEED) structure analysis. The surface morphology was analyzed by considering mixtures of domains with different surface layer stacking geometries. On the 6H–SiC(0001) surface ABCACB stacking is the dominating termination, covering about 80% of the surface. On [Formula: see text] all three possible surface stacking sequences are present. The (111) surface of a 3C–SiC film sample shows linear stacking of layers with only one domain orientation present. In contrast to the carbon-terminated 6H sample, the silicon-terminated surfaces are covered by an oxygen layer with the adatoms bound on top of silicon.

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Section: Sic Growth Polytypes and Surface Morphologymentioning

confidence: 99%

Atomic Structure of Hexagonal 6H– and 3C–SiC Surfaces

et al. 1998

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“…[7][8][9][10][11] As the latter still limits the performance of silicon carbide (SiC) in various nuclear radiation detection, 12 and high power, frequency, and temperature device applications, 13 the continued development of optimized SiC surface cleaning processes offers the potential to further the advancement of SiC for these applications. [21][22][23][24][25][26][27] However, these studies have largely ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing, 28 and has been shown in many cases to have a profound effect on surface/interface reactivity [29][30][31][32][33] and device performance. [18][19][20] In this regard, numerous studies related to SiC surface cleaning and preparation have been reported and have focused primarily on carbon, oxygen, and fluorine related contamination species.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

King¹,

Tanaka²,

Davis³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inDilute hydrogen plasma cleaning of boron from silicon after etching of Hf O 2 films in B Cl 3 plasmas: Substrate temperature dependence Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasmacleaned, n -type ZnO{0001} surfaces Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ionbeam-damaged diamond films Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H 2 ) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H 2 desorption at both lower temperatures (200-550 C) as well as higher temperatures (>700 C). The low temperature H 2 desorption was deconvoluted into multiple desorption states that, based on similarities to H 2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H 2 desorption was similarly attributed to H 2 evolved from surface O-H groups at $750 C as well as the liberation of H 2 during Si-O desorption at temperatures >800 C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H 2 desorption from previously undetected silicon hydride and surface hydroxide species.

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“…The hexagonal bilayer of SiC, i.e., the ͑0001͒ plane in hexagonal and the ͑111͒ plane in cubic polytypes, is of particular importance in that respect as it is the most widely used growth plane. A number of investigations dealing with the properties of surfaces in these orientations have recently been reported whereby most of the publications [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] deal with qualitative aspects such as stoichiometry and surface preparation. Little experimental work, however, has been published concerning the electronic band structure of SiC.…”

Section: Introductionmentioning

confidence: 99%

Electronic and atomic structure of the6H−SiC(0001¯)surface studied by ARPES, LEED, and XPS

et al. 1998

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We present an investigation of the electronic and geometric structure of the carbon terminated 6H-SiC(0001) surface. The samples were prepared in different ways that result in the same unreconstructed (1ϫ1) surface. From angle-resolved photoemission spectra taken along the ⌫ M and the ⌫ K azimuth, the strong dispersion of a surface state in the ionic gap and of a bulk state at the boundary of the ionic gap is measured. This indicates unambiguously that large areas of the surface are well ordered. The comparison with band-structure calculations shows that even these areas do not have the properties of an intrinsic 6H-SiC(0001) surface. From a low-energy electron diffraction ͑LEED͒ structure analysis of the same surface a model is determined with domains of all three possible bilayer truncations of the bulk unit cell present at the surface with equal weight. For the well-ordered parts of the surface the combination of LEED and core-level x-ray photoemission spectroscopy ͑XPS͒ favors a geometry with hydrogen adatoms bonded to the topmost carbon atoms of the first bilayer thus saturating the surface dangling bonds. However, the XPS data also show that the applied sample treatment does not yield a surface that is completely free of oxygen contamination, which must be located in the disordered parts of the surface. ͓S0163-1829͑98͒11031-7͔

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Analysis of Heat-Treated 6H-SiC(0001) Surface Using Scanning Tunneling Microscopy

Cited by 19 publications

References 8 publications

Atomic Structure of Hexagonal 6H– and 3C–SiC Surfaces

Atomic Structure of Hexagonal 6H– and 3C–SiC Surfaces

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Electronic and atomic structure of the6H−SiC(0001¯)surface studied by ARPES, LEED, and XPS

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