Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements

Abstract

of the Cgd measurement, a new method of extracting profile of interface trapped charge using the gate-to-substrate capacitance (C,) is also proposed.In this paper we describe and demonstrate the use of gate-to-drain capacitance (cgd) measurements at cryogenic temperature as a tool to characterize hot-carrier-induced charge centers. Also a new method based on gate-to-substrate capacitance (Cgb), validated by means of two-dimensional numerical simulation, is proposed to extract the spatial distribution of oxide interface charges with reasonable accuracy.The results and methodology presented in this paper will extend our understanding of the physics of MOSFET degradation under stressing.