Analysis of III–V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

Bukkems, HG Heino; Oei, YS Yok-Siang; Richter, Uwe; Gruska, Bernd

doi:10.1016/s0040-6090(99)00956-6

Cited by 5 publications

(1 citation statement)

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“…Experimental data on n-InGaAs can be found in [21]. Our samples are characterized using spectroscopic ellipsometry [22], giving refractive indices of 3.51 and 3.20 for n-InGaAs (Sample A) and n-Q1.25 (Sample B), respectively. The error of these measured results are estimated to be ± 0.02 as indicated by the vertical error bar.…”

Section: Carrier-induced Change In Refractive Indexmentioning

confidence: 99%

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

et al. 2016

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In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to annealing-free ohmic contacts and low contact resistances at the level of 10 À7 cm 2 . It also leads to strong band-filling effects in InGaAs and InGaAsP, which result in low optical absorption losses in the contact layer. Combined with the low optical loss of AgGe, a massive reduction of the propagation loss in membrane waveguides is observed compared with other existing solutions. An additional advantage is the minimal influence of thermal treatments during the processing, leading to very stable high-performing contacts.

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Section: Carrier-induced Change In Refractive Indexmentioning

confidence: 99%

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

et al. 2016

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Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region

et al. 2021

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A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 µm and 1.55 µm, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys’ precise compositions and bandgap values were confirmed using high-resolution x-ray diffraction and photoluminescence, to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1−x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure, which we present in detail.

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Refractive index of In<inf>1−x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1−y</inf> lattice-matched to InP in IR-transparent and absorption region

Seifert

Runge

2014

26th International Conference on Indium Phosphide and Related Materials (IPRM)

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Analysis of III–V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

Cited by 5 publications

References 5 publications

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region

Refractive index of In<inf>1−x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1−y</inf> lattice-matched to InP in IR-transparent and absorption region

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Analysis of III–V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

Cited by 5 publications

References 5 publications

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region

Refractive index of In<inf>1&#x2212;x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1&#x2212;y</inf> lattice-matched to InP in IR-transparent and absorption region

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Refractive index of In<inf>1−x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1−y</inf> lattice-matched to InP in IR-transparent and absorption region