Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Abstract

Articles you may be interested inInvestigation of improved regrown material on InP surfaces etched with methane/hydrogen/argon J.Structure and formation mechanisms of AlGaAs V-groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V-grooves Appl.We have studied a wide variety of wet and dry etching methods for InP substrates and subsequent surface treatments in preparation for regrowth. To evaluate these processes, a multiple quantum well heterostructure consisting of InGaAs quantum wells of varying widths was regrown on these etched surfaces by metalorganic chemical vapor deposition. This heterostructure was chosen so that we could use low temperature photoluminescence to determine etch damage propagation from the surface. We have found that the photoluminescence intensity of regrown quantum wells close to CH 4 /H 2 /Ar reactive-ion-etched surfaces is greater than for quantum wells grown the same distance from wet etched surfaces. This technique provides isolation of the characteristics of the etch and clean-up procedure.