Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Bhagwat, Vinay; Xiao, Yuanzhang; Bhat, Ishwara B.; Dutta, P.S.; Refaat, Tamer F.; Abedin, M. Nurul; Kumar, Vikram

doi:10.1007/s11664-006-0206-x

Cited by 22 publications

(18 citation statements)

References 19 publications

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“…This indicates the necessity of passivation of the diode to reduce surface leakage current. These values of the surface recombination velocities are close to the values obtained for GaInAsSb photodiodes [6] as 2250 and 10 6 cm/s, respectively. Therefore these are the expected values from those diodes where Sb is the dominant material (In 0.13 Ga 0.87 As 0.11 Sb 0.89 ) [6] Also we can see dislocation tends to increase the surface leakage current.…”

Section: Resultssupporting

confidence: 87%

“…These values of the surface recombination velocities are close to the values obtained for GaInAsSb photodiodes [6] as 2250 and 10 6 cm/s, respectively. Therefore these are the expected values from those diodes where Sb is the dominant material (In 0.13 Ga 0.87 As 0.11 Sb 0.89 ) [6] Also we can see dislocation tends to increase the surface leakage current. A detail analysis of this effect on InGaSb PIN photodiodes [15] can be made as is done for HgCdTe photodiodes [5].…”

Section: Resultssupporting

confidence: 87%

“…So in the present model, the effect of dislocation density on the surface leakage current component is added. As a result by considering the dislocation effect, the obtained parameters value of different material is changed which differs our model from the one developed by Bhagwat et al [6] for GaInAsSb photodiodes.…”

Section: Electronic Propertiesmentioning

confidence: 94%

“…The diffusion constants are obtained from experimental carrier mobilities, m p and m n , using the Einstein relation, D/m ¼ kT/q. The R 0 A from generationrecombination at the bulk region of the diode is given by [6] (…”

Section: R 0 a Modelmentioning

confidence: 99%

“…In addition to the dislocation dependence, the temperature dependence of minority carrier lifetime is also included in the model described for HgCdTe photovoltaic detectors in [5]. An analysis of leakage current for GaInAsSb photodiodes has been done in [6] and a temperature-dependent model of minority carrier lifetime, especially for InGaSb, has been depicted in [7]. However, dislocation effect is yet to be included in the models for InGaSb PIN photodiodes.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Tanzid¹,

Mohammedy²

2012

IET Optoelectron.

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This study represents an analysis of electrical and optical characteristics of InGaSb PIN photodiodes. The electrical characteristics are analysed by depicting a model of zero-bias resistance-area product (R 0 A) of such photodiodes. The effects of dislocation and temperature on R 0 A are also included in the model. Different optoelectronic properties of the material are extracted by fitting the obtained models with experimental data. The extracted dislocation density is 6.67 × 10 8 cm 22 , which is close to the measured value of 2.4(+0.2) × 10 8 cm 22 . Through the dislocation and temperature-dependent modelling, maximum R 0 A is found to be 1.85 V cm 2 at 139 K. Experimental data obtained at 300 and 363 K are fitted with theoretical model. The optical properties are analysed by the modelling of responsivity, quantum efficiency and detectivity. Cutoff wavelength is found to be 2271 nm, which is within +5 nm of the experimentally obtained data. The present analysis gives a photodiode responsivity is 0.47 A/W, quantum efficiency is 28.86% and detectivity is 1.53 × 10 9 cm Hz 1/2 /W 1 at a particular wavelength of l ¼ 2.0 mm, which are agreeable to the experimentally obtained data.

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Section: Resultssupporting

confidence: 87%

Section: Resultssupporting

confidence: 87%

Section: Electronic Propertiesmentioning

confidence: 94%

Section: R 0 a Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Tanzid¹,

Mohammedy²

2012

IET Optoelectron.

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Carrier Transport Properties

Adachi

2009

Properties of Semiconductor Alloys

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Sn‐Based Self‐Powered Ultrafast Perovskite Photodetectors with Highly Crystalline Order for Flexible Imaging Applications

Zhao

et al. 2023

Adv Funct Materials

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Sn-based perovskite materials are promising lead-free alternatives in thin film photodetectors (PDs) for applications such as optical communications, night visions and biomedical near-infrared imaging systems. However, constructing Sn-based photodetectors with high sensitivity, ultrafast response, and good operation stability has been a challenge. Herein, the phenyl-ethyl ammonium (PEA + ) additive is introduced in pristine FASnI 3 , which regulates the thin film growth, passivates the trap/defect states, prevents Sn 2+ /Sn 4+ oxidation, and releases the crystal strain. The Resulting FA 0.8 PEA 0.2 SnI 3 thin films exhibit highly crystalline order and flexibility. A self-powered PD using FA 0.8 PEA 0.2 SnI 3 as the active layer demonstrates excellent responsivity of 0.262 W −1 , detectivity of 2.3 × 10 11 Jones. And it possesses the fastest rise and decay time of 25 µs and 42 µs as compared with the state-of-art Sn-based perovskite PDs. The transient absorption spectroscopy analysis validates greatly reduced trapping states and defects of FASnI 3 with the PEA + film for ultrafast response. A flexible Sn-based perovskite PD without any encapsulation in air continuously shows ultrafast responses after 10,000 bending cycles. Meanwhile, a flexible imaging system can be realized by a 5 × 5 PD array with good sensing results. This study shows great potential in nontoxic and ultrafast Sn-based perovskite PDs for flexible imaging applications.

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Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Cited by 22 publications

References 19 publications

Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Carrier Transport Properties

Sn‐Based Self‐Powered Ultrafast Perovskite Photodetectors with Highly Crystalline Order for Flexible Imaging Applications

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