Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous silicon

Phys. Status Solidi (c)

2009

Self Cite

Lifetime distribution and characteristic lifetime of the defect photoluminescence (PL) in a‐Si:H have been obtained by means of frequency resolved spectroscopy at various temperatures in the range of 10‐200 K. Temperature variation of the radiative recombination rate has been obtained from the intensities and the characteristic lifetimes. The results obtained for the a‐Si:H films as grown and after prolonged illumination have been compared. Thermal quenching of the defect PL becomes more significant after illumination. However the decrease of lifetime with raising temperature becomes less significant after illumination. Increase of the radiative recombination rate with increasing temperature, which is significantly observed above 100 K, becomes less significant after the illumination, indicating that the illumination causes the increase of the density of strongly localised tail states. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 84%

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confidence: 92%

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confidence: 99%

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Temperature variation of radiative recombination rate of electron‐hole pairs responsible for defect photoluminescence in a‐Si:H

Ogihara

Phys. Status Solidi (c)

2009

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“…However, it is possible to obtain a single value which characterises the lifetime distribution. We have developed a method for obtaining the characteristic lifetime [2][3][4][5] by means of frequency resolved spectroscopy (FRS).…”

mentioning

confidence: 99%

“…The method for determination of the characteristic lifetimes has been described in our previous papers [2][3][4][5].…”

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confidence: 99%

Light‐induced effects on the radiative recombination rate of electron‐hole pairs in a‐Si:H

Ogihara

Inagaki

2011

Phys. Status Solidi C

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Temperature variation of radiative recombination rate obtained for defect photoluminescence (PL) in high‐quality a‐Si:H after illumination of intense pulsed light is presented and compared with results previously reported for defective a‐Si:H films. We have not found significant difference between the temperature variation of the rate of radiative recombination at photo‐created radiative defects and that at native radiative defects. This fact suggests the recombination processes at the photo‐created defects and the native defects are similar. The temperature dependence of the radiative recombination rates in a‐Si:H is predicted by a model of the recombination processes for various cases of different density of deep and strongly localised tail states. Our recent experimental results for the principal PL and defect PL coincide with the prediction of the model. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Recombination processes and light‐induced defect creation in hydrogenated amorphous silicon

Physica Status Solidi (a)

2009

Recombination processes of electrons and holes in hydrogenated amorphous silison (a‐Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light‐induced electron spin resonance (LESR) are compared, and it is concluded that radiative centres responsible for the long decay component of PL are not LESR centres that are nonradiative centres. This is consistent with our model. The mechanism of light‐induced defect creation in a‐Si:H and its kinetics is summarized in terms of our model. The related defects involved in the recombination processes and the light‐induced defect creation in a‐Si:H are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)