Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode

Hayashino, Kouhei; Harauchi, Kenji; Iwasaki, Yukiko; Fukui, Kazuhito; Ao, Jin‐Ping; Ohno, Yasuo

doi:10.1109/imws.2012.6215780

Cited by 9 publications

(4 citation statements)

References 4 publications

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“…The conversion efficiency strongly depends on the performance of the Schottky barrier diode (SBD) used in the rectenna circuit, such as on-resistance, off-capacitance, and turn-on voltage. To improve the efficiency, the reduction of the turn-on voltage to breakdown voltage ratio is very important [6]. As a wide bandgap semiconductor, gallium nitride (GaN) is regarded as a promising material compared with silicon and GaAs to realize high breakdown-voltage, low turn-on voltage to breakdown voltage ratio, and low-resistance devices [7].…”

Section: Introductionmentioning

confidence: 99%

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Kishi

Liu

et al. 2014

IEEE J. Electron Devices Soc.

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GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse breakdown characteristics are comparable to each other. Theoretically, the SBDs with TiN electrodes can enhance the efficiency of a rectenna circuit at 2.45 GHz from 84% to 89% when the turn-on voltage decreases from 1.0 to 0.5 V.

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Section: Introductionmentioning

confidence: 99%

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Kishi

Liu

et al. 2014

IEEE J. Electron Devices Soc.

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“…To improve the conversion efficiency, reduction of ratio of the turn-on voltage to the breakdown voltage is important. [2] Gallium nitride (GaN) is an attractive material for SBDs due to its high-breakdown voltage, high-frequency operation and high-temperature performance. [3] Recently, different anode materials such as Ni, W and Mo are applied in GaN SBDs.…”

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confidence: 99%

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Wang

et al. 2019

Chinese Phys. Lett.

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The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175°C, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with TiN anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.

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“…9 is a schematic of the RF rectifier circuits. Each comprises a single shunt rectifier [20], [21] with a Schottky barrier diode, a 1/4 wavelength inductance (1.5 nH) and a capacitance. The forward voltage, junction capacitance and onstate resistance of the fabricated GaN SBD are 0.7 V, 0.2 pF and 108 , respectively.…”

Section: Gan Bi-directional Power Switch Integration Chipmentioning

confidence: 99%

“…13, the fabricated GaN-GIT bi-directional switch has a breakdown voltage over 500 V in both directions. 400-V 3-phase power grid, since the fabricated GaN-GIT bi-directional switch can handle 10 A at up to 500 V. It is approximately 1% of the size of a conventional matrix converter with discrete components [21]. The fabricated DBM gate drive transmitter chip is mounted on the PCB that the 9 isolated dividing couplers are made inside.…”

Section: Gan Bi-directional Power Switch Integration Chipmentioning

confidence: 99%

A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

Nagai

Yamada

Negoro

et al. 2015

IEEE J. Electron Devices Soc.

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This paper describes an ultracompact GaN 3 × 3 matrix power converter with drive-bymicrowave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with co-integrated RF rectifiers, novel isolated dividing couplers in a printed circuit board to reduce complicated gate lines, and low-consumption GaN/Si DBM gate driver on a chip that controls nine bi-directional power switches. The proposed 4.0-kW GaN 3 × 3 matrix power converter is extremely compact, measuring only 18 × 25 mm due to the use of GaN-GIT power device integration technology and DBM technology that provides isolated gate signals by microwave wireless power transmission and eliminates the need for photo-couplers and isolated power supplies. The GaN/Si DBM driver realizes low power consumption of only 2.0 W as a result of gate power sharing with three RF oscillators. The sequential switching operation by the fabricated GaN 3 × 3 matrix converter was successfully achieved.INDEX TERMS Gallium nitride, driver circuits, power integrated circuits, power semiconductor switches, matrix power converter, microwave circuits.

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Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode

Cited by 9 publications

References 4 publications

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

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Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode

Cited by 9 publications

References 4 publications

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

Contact Info

Product

Resources

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Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*