Analysis of mask CD error by dose modulation for fogging effect

Lee, Ho‐June; Yang, Seung-Hune; Kim, Byung-Gook; Moon, Sung-Yong; Choi, Sung‐Woon; Yoon, Hee-Sun; Han, Woo-Sung

doi:10.1117/12.557713

Cited by 3 publications

(3 citation statements)

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“…Mask manufacturing effects could be equipment or mask process induce. Mask induced factor are pixel resolution, laser wavelengths, e-beam, resist types, wet versus dry etch, fogging effect [5] and site-specific techniques such as process bias. When we make the mask which has high clear pattern density, there are two types of mask.…”

Section: Introductionmentioning

confidence: 99%

Image tone optimization in advanced mask making for DUV lithography

Kim

Jeong

et al. 2007

SPIE Proceedings

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Deep-UV (DUV) lithography has been developed to define minimum feature sizes of sub-100 nm dimensions of devices semiconductor. In response to this trend, DUV mask technology has been proposed as an effective technique for considering the reduction of mask making cost, especially, in low volume designs. However, the requirement of tight CD control of the mask features in advanced devices is resulted in increasing of mask cost. In this research, we discussed two different typed image tones comparison, positive and negative tone, in DUV lithography. The choice of final mask tone needs to be selected as function of pattern density and shape. The evaluation items to judge if the mask is good are the OPC model accuracy, resolution and mask throughput. Both mask process and manufacturing throughput are affected by image tone type of positive and negative . This paper will show the procedures and results of experiment.

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Section: Introductionmentioning

confidence: 99%

Image tone optimization in advanced mask making for DUV lithography

Kim

Jeong

et al. 2007

SPIE Proceedings

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“…Both aspects of fogging usually need a detailed characterization of drop size, shape, and density of deposition in addition to its chemical composition. Besides the great practical interest in the electron-beam fogging effect in microelectronic manufacturing 1 and advanced microlithography technologies, [2][3][4] there are other important industrial and medical applications that need a characterization of fogging.…”

Section: Introductionmentioning

confidence: 99%

Experimental prototype of a system to measure size and distribution of droplets in organic compound fogging on glass substrates

Alvarado

Kurmyshev

2007

Opt. Eng

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We propose an alternative test for the characterization of fogging by organic compound of interior automotive materials and develop a semiautomated experimental prototype of a system for the acquisition and digital processing of images of droplets on glass substrates. We found optimal conditions of illumination of samples of fogging for the acquisition of images, achieving the resolution of 2 m that is basically the limitation of the microscope used in the experiment. The list of parameters that characterize fogging was extended; in addition to size, we measure the shape, orientation, and distribution of droplets over the substrate. The shape of droplets on a substrate is given by equivalent ellipses. The following processes of the fogging characterization were automated: substrate positioning and image sampling at points selected randomly or on a regular lattice; acquisition, storage, and binarization of digital images; histograms of shape features, orientation, size, and deposition density of drops. As an example, we report the statistical analysis of drops of organic compounds. Two methods for the shape description of drops are evaluated and compared also.

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“…CD(Critical Dimension) NonUniformity on a mask is normally separable into global and local CD uniformity errors by means of their error sources, and the global CD uniformity error is one of the components that has to be removed properly [1][2] . Moreover, with smaller pattern design, local components of CD uniformity could affect mask quality more like global components.…”

Section: Introductionmentioning

confidence: 99%

Monitoring system of CD error analysis for the 90-nm node mask manufacturing

Kim

Cha

et al. 2005

SPIE Proceedings

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CD(Critical Dimension) Non-Uniformity on a mask is normally separable into global and local CD errors by means of their error sources. In general a global CD error trend on a mask shows the properties of each process. On the other hand, local CD errors on a mask are pretty much random and caused from mainly measurement errors, LER(Line Edge Roughness), and litho-shot errors. However, because of its difficulty to pin point the sources of errors and correct them, the local CD errors are required more attention. A Global CD error trend on a mask can be classified into several groups. One originating from vacuum delay, lithography error, bake and etch process will cause a side error trend on a mask. Others are fogging, radial trends of develop, and etch loading. In order to classify all those global CD errors and local CD errors, the proper monitoring mask must be required. The works on this paper mainly focalize on minimizing global CD error trends on a mask by separating and analyzing error components with proper monitoring system of each process. We therefore, provide a monitoring mask designed for efficiently representing global and local CD errors in more detailed fashion which can analyze CD errors of each process and make feed-back to each process in order to improve each process of mask manufacturing.

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Analysis of mask CD error by dose modulation for fogging effect

Cited by 3 publications

References 0 publications

Image tone optimization in advanced mask making for DUV lithography

Image tone optimization in advanced mask making for DUV lithography

Experimental prototype of a system to measure size and distribution of droplets in organic compound fogging on glass substrates

Monitoring system of CD error analysis for the 90-nm node mask manufacturing

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