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Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasmaenhanced metalorganic chemical vapor deposition Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers J. Appl. Phys. 98, 023514 (2005); 10.1063/1.1978991 Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates Cu 2 O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper͑II͒ hexafluoroacetylacetonate ͓Cu͑C 5 HF 6 O 2 ͒ 2 ͔, oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu 2 O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu 2 O thin films grow on ZnO with preferred ͑220͒ Cu 2 O ʈ ͑0002͒ ZnO orientation. The grain size and stress in Cu 2 O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p-type Cu 2 O films with hole mobilities exceeding 30 cm 2 / V s are obtained at a deposition temperature of 400°C.

As the CD specification on Masks is getting more tighten, the fogging effect by re-scattered incident electron at a high acceleration c-beam system and the loading effect at dry etching step due to pattern density are current critical issues for mask making. These give rise to the variation ofmean CD value and the degradation of global CD uniformity. So we have to correct these effects accurately in order to meet the CD specification for design rule 0. 1 5um or below devices.In this paper, we have applied a new positive CA (chemically amplified) resist from Fuji Film Arch co., It was written at 50 kV variable vector scan B-beam system and we tried to classify the CD error by the fogging and loading effect, respectively. Also we have compared with ZEP7000 resist, non-CAR positive type, which is used widely for conventional c-beam mask making to assess the CAR performance, especially in terms of CD error causing by the fogging effect. Through this comparison test, we found that the CD error due to the fogging effect shows somewhat different value according to resist type and writing strategy even though use same exposure dose. In this paper, we have assumed that such results are due to the difference of dose latitude. Dose latitude is different as intrinsic contrast (y) value of each resist and writing strategy such as writing pass, should affect on beam profile (dose profile), it can also change pattern profile of resist and it can fmally cause a dose latitude difference.Finally, we have evaluated for CD mean error and uniformity error by fogging and etch loading as open ratio (40%, 60%, 80%) changing, respectively.

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As the wafer design rule is getting smaller, the size and transmittance of the defect on the reticle, especially for the semitransparent defect, is one of the important factors to be controlled in mask shop. In order to minimize controversy for the accuracy of size and transmittance measurement, we need to defme the detection and measurement ability of each inspection machine for the halftone defect. In this work, we make semi-transparent defects with FIB repair tool, SEIKO, and treat this plate with NaOH. We first investigate the detectibiity of each inspection machine for the semi-transparent defects according to the size and transmittance increase and accuracy of size measuring tool supported in the each inspection machine, KLA, Lasertec and ORBOT. We verify the measurement result with CD SEM for the size and AIMS for the transmittance