As the CD specification on Masks is getting more tighten, the fogging effect by re-scattered incident electron at a high acceleration c-beam system and the loading effect at dry etching step due to pattern density are current critical issues for mask making. These give rise to the variation ofmean CD value and the degradation of global CD uniformity. So we have to correct these effects accurately in order to meet the CD specification for design rule 0. 1 5um or below devices.In this paper, we have applied a new positive CA (chemically amplified) resist from Fuji Film Arch co., It was written at 50 kV variable vector scan B-beam system and we tried to classify the CD error by the fogging and loading effect, respectively. Also we have compared with ZEP7000 resist, non-CAR positive type, which is used widely for conventional c-beam mask making to assess the CAR performance, especially in terms of CD error causing by the fogging effect. Through this comparison test, we found that the CD error due to the fogging effect shows somewhat different value according to resist type and writing strategy even though use same exposure dose. In this paper, we have assumed that such results are due to the difference of dose latitude. Dose latitude is different as intrinsic contrast (y) value of each resist and writing strategy such as writing pass, should affect on beam profile (dose profile), it can also change pattern profile of resist and it can fmally cause a dose latitude difference.Finally, we have evaluated for CD mean error and uniformity error by fogging and etch loading as open ratio (40%, 60%, 80%) changing, respectively.

We have developed next generation photomasks with a variety of method and approach including new material, machines and technology. Because enhanced resolution and pattern fidelity are required rapidly in photomask for coping with further advances in optical lithography. Specially Laser Lithography, A1ta3500 has low butting error, fast throughput and registration but has a weak point as corner rounding, CD linearity and ID bias against minimum MEEF (Mask Error Enhancement Factor) acquisition and enhanced pattern printability. But we can not help feeling much cost burden and worse productivity problem in the process of advanced photomasks development. Therefore we have to always consider low cost under high precision technology with current machine and material. We need to extend A1ta3500 productivity for advanced device and a variety of device types. So we approached Optical Proximity Correction(OPC) among several candidates for helping that kinds of requirement. And we selected Rule Based OPC for helping fast application of correction rule and low mask complexity. We evaluated mainly Serif and Jog pattern for acquiring corner rounding, CD linearity and ID bias improvement at Alta3500. And we made a conclusion that A1ta3500 can extend to O.15u Logic fabrication with implementation of OPC pattern generation. In this paper, details of OPC effects and application for 0. 1 5um devices will be further discussed.

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ArF Lithography that is expected the candidate for next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12 jim design-rule and beyond. For the next-generation lithography, the most of important requirement for mask process is enough resolution and good pattern fidelity to generate various critical patterns, ofwhich sizes are below O.5um main pattern including OPC patterns.In this paper, we describe in terms of blank mask properties, mask making process and wafer performance of ArF attenuated Phase Shift Mask (att-PSM) using TiN/Si3N4 (abbreviated as TiN/SiN) multi-layer for Next-Generation Lithography (NGL). In view point ofmaterial, we have evaluated for the applicability ofTiN/SIN multi-layer to ArF lithography as compared with non-stoichiometric MoSiON-based single-layer structure. In mask making process, we used Chemically amplified resist (CAR) process characteristics and Dry etching system for improvement of enough resolution and pattern fidelity Also we have investigated wafer performance for ArF att-PSM in terms of process windows as compared with BIM (Binary Intensity Mask) in l2Onm D/R real cell pattern and lOOnm L/S( Line and Space) DIR pattern, respectively.