2000
DOI: 10.1117/12.392044
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ArF halftone PSM cleaning process optimization for next-generation lithography

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Cited by 3 publications
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“…A mixture of NH 4 OH in water partially dissociates into NH 4 + and OH -ions and this ionized solution increases the pH of the cleaning mix and attain suitable zeta potential values. However the OH-ions are also responsible for material loss [2,3], e.g. OH -attack on Si surface and form a negative SiO 2 (OH) 2 2-species.…”
Section: Introductionmentioning
confidence: 99%
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“…A mixture of NH 4 OH in water partially dissociates into NH 4 + and OH -ions and this ionized solution increases the pH of the cleaning mix and attain suitable zeta potential values. However the OH-ions are also responsible for material loss [2,3], e.g. OH -attack on Si surface and form a negative SiO 2 (OH) 2 2-species.…”
Section: Introductionmentioning
confidence: 99%
“…However the OH-ions are also responsible for material loss [2,3], e.g. OH -attack on Si surface and form a negative SiO 2 (OH) 2 2-species. The positive counter ions NH 4 + can, due to their high mobility, diffuse onto the surface and interact with the Si-O bond of the negative species (figure 1).…”
Section: Introductionmentioning
confidence: 99%