Analysis of Metal-Insulator Crossover in Strained SrRuO3 Thin Films by X-ray Photoelectron Spectroscopy

Nardi, A.; Bigi, Chiara; Chaluvadi, Sandeep Kumar; Ciancio, Regina; Fujii, Jun; Vobornik, I.; Panaccione, G.; Rossi, G.; Orgiani, P.

doi:10.3390/coatings10080780

Cited by 7 publications

(3 citation statements)

References 53 publications

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“…By substituting Sr by La in the parent compound LaMnO 3 , the pseudocubic lattice parameter decreases from 0.3944 to 0.3805 nm for LaMnO 3 to SrMnO 3 , respectively. As the films are grown on STO with the cubic lattice constant a = 0.3905 nm, the film experiences higher tensile strain and consequent reduction of the out-of-plane lattice constant “ c ” with an increase in Sr doping. , The estimated Poisson ratio for the films is ∼0.36 ± 0.02, which is a typical value for oxides and manganites. , The RHEED pattern shown in the inset of Figure a with well-defined sharp diffraction streaks corresponds to a long-range crystallinity order of the film.…”

Section: Resultsmentioning

confidence: 99%

Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

et al. 2022

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The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La 1– x Sr x MnO 3 (0.15 ≤ x ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L 2,3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L 2,3 edges reveal the combination of epitaxial strain, and different MnO 6 crystal field splitting give rise to a peak at ∼641 eV. The observed changes in the occupancy of the e g and the t 2g orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.

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Section: Resultsmentioning

confidence: 99%

Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

et al. 2022

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“…Numerical simulations of the low-angle XRR data (i.e., solid curve in Figure 2b) are performed using the IMD package of the XOP software [32]. XRR oscillations can be seen for 2θ values up to 5 degrees and above it, the oscillations fall below the experimental sensitivity of the x-ray diffractometer [33,34]. The estimated growth rate of the film is ≈0.13 Å per laser pulse.…”

Section: Structural Propertiesmentioning

confidence: 99%

Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser

et al. 2021

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Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe PLD growth protocols were fine-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically flat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. In-situ ARPES with linearly polarized horizontal and vertical radiation shows hole-like and electron-like pockets at the Γ and M points of the Fermi surface, consistent with previous observations on cleaved single crystal surfaces. The control achieved in growing quantum materials with volatile elements such as Se by in-situ PLD makes it possible to address the fine analysis of the surfaces by in-situ ARPES and XPS. The study opens wide avenues for the PLD based heterostructures as work-bench for the understanding of proximity-driven effects and for the development of prospective devices based on combinations of quantum materials.

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“…[ 11–13 ] Moreover, while recent progresses in the synthesis of rare‐earth scandiate oxide single‐crystals allow the coherent growth of functional perovskites (e.g., ferroelectrics, multiferroics) characterized by large lattice parameters, [ 14 ] the choice of the material for electrodes is mostly confined to the strontium ruthenate SrRuO 3 , whose electrical properties, however, are strongly dependent on substrate induced strain mechanism. [ 15,16 ] On the contrary, the large in‐plane lattice parameters of SNO indicate it as an ideal candidate for multi‐layered epitaxial heterostructures ( Figure ). The electronic band structure of oxygen‐deficient SNO thin films was recently probed by angle‐resolved photoelectron spectroscopy (ARPES).…”

Section: Introductionmentioning

confidence: 99%

Oxygen‐Driven Metal–Insulator Transition in SrNbO₃ Thin Films Probed by Infrared Spectroscopy

Pietro

Bigi

Chaluvadi

et al. 2022

Adv Elect Materials

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addition to this strategy, the electronic and magnetic properties of these oxides, as well as the performance of devices based on their use, are also extremely sensitive to the oxygen content in the lattice. For example, oxygen vacancies acting as shallow donors can drastically affect the number of conducting electrons and have a significant role in the catalytic properties of perovskites, [4] while p-doping through hosting excess oxygen ions in the lattice was demonstrated as an effective way to modulate the band-filling of 3d valence states, [5] and bias-induced drifting of oxygen ions in/ out of the perovskite modifies significantly the resistance of memristive devices in the boundary region among the oxide and the metal electrode. [6,7] At variance with the most explored 3d compounds, for the isostructural perovskites hosting 4d transition metal ions the more extended 4d electronic states in the B-site provide larger hybridization with the surrounding oxygen ions and weaker on-site Coulomb repulsion, thus promoting stronger metallic behavior and reduced electronic correlation effects. In particular, strontium niobate SrNbO 3 (SNO, Nb 4d 1 nominal valence) has recently attracted a lot of interest as a promising visible-light photocatalysts for water splitting, [8][9][10] and as a transparent conductor in the visible and ultraviolet spectra, which makes it an ideal electrode material for high-performance UV light emitting diodes and for plasmonics. [11][12][13] Moreover,The occurrence of oxygen-driven metal-insulator-transition (MIT) in SrNbO 3 (SNO) thin films epitaxially grown on (110)-oriented DyScO 3 has been reported. SNO films are fabricated by the pulsed laser deposition technique at different partial O 2 pressure to vary the oxygen content and their structural, optical, and transport properties are probed. SNO unit cell has been found to shrink vertically as the oxygen content increases but keeping the epitaxial matching with the substrate. The results of Fourier-transform infra-red spectroscopy show that highly oxygenated SNO samples (i.e., grown at high oxygen pressure) show distinct optical conductivity behavior with respect to oxygen deficient films, hence demonstrating the insulating character of the formers with respect to those fabricated with lower pressure conditions. Tailoring the optical absorption and conductivity of strontium niobate epitaxial films across the MIT will favor novel applications of this material.

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Analysis of Metal-Insulator Crossover in Strained SrRuO3 Thin Films by X-ray Photoelectron Spectroscopy

Cited by 7 publications

References 53 publications

Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser

Oxygen‐Driven Metal–Insulator Transition in SrNbO₃ Thin Films Probed by Infrared Spectroscopy

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Analysis of Metal-Insulator Crossover in Strained SrRuO3 Thin Films by X-ray Photoelectron Spectroscopy

Cited by 7 publications

References 53 publications

Electronic Properties of Fully Strained La1–xSrxMnO3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Electronic Properties of Fully Strained La1–xSrxMnO3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser

Oxygen‐Driven Metal–Insulator Transition in SrNbO3 Thin Films Probed by Infrared Spectroscopy

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Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Electronic Properties of Fully Strained La_1–xSr_xMnO₃ Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Oxygen‐Driven Metal–Insulator Transition in SrNbO₃ Thin Films Probed by Infrared Spectroscopy