We have created a set of crystalline model structures exhibiting straight lines of Al3+ connected to chalcogenides (O2−, S2−, and Se2−) connected to metal cations of varying valence (Sr2+, Y3+, Zr4+, Nb5+, and Mo6+). They were relaxed with density functional theory computations and analysed by Bader partitioning. As Al3+ ions are supposed to strongly interact with their atomic environment, we studied the electron density topology induced by higher‐valent cations in the extended chemical neighbourhood of Al. In fact, we found a general decrease of ionic charges and an increasing displacement of the chalcogenides towards higher‐valent ions for the heavier chalcogens. Therefore, we comprehensively screened S‐ and Se‐containing compounds for candidates theoretically exhibiting low migration barriers for Al3+ ions by using Voronoi–Dirichlet partitioning and bond valence site energy calculations. The basis for this search is the Inorganic Crystal Structure Database. Indeed, we could extract six promising candidates with low Al3+ migration barriers. which are even lower than the barriers for any other element inside of these materials. This will encourage efforts towards preparing suitable Al3+ conductors.