“…These temperatures lead to accelerated degradation rates in various thermally-induced parametric factors [31] (cf. Section 1.3), such as electro-migration (EM) [30], biastemperature instability (BTI) [24], gate oxide breakdown [29], propagation delays [57,58], leakage power [59], and power/ground integrity [31]. Thus, it is crucial to design these high-power density MPSoCs in a thermally-aware manner to abate the mentioned degradation factors, even before experiencing the non-homogenous time-varying workload characterizations.…”