Analysis of optical damage in germanium induced by a continuous wave laser

Lee, Kwang Hyun; Shin, Wan Soon; Kang, Eung Cheol

doi:10.1364/ao.52.002055

Cited by 13 publications

(7 citation statements)

References 15 publications

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“…According to Equations ( 8)-( 12) can solve the temperature distribution T(x, t) of a flat window under the action of a laser [23][24][25]. Due to the non-linear changes in the actual physical parameters, the temperature field is also unstable.…”

Section: Optical Element Substrate Thermal Responsementioning

confidence: 99%

Experimental Study on the Damage of Optical Materials by out of Band Composite Laser

et al. 2020

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For the paper, experimental studies were performed on the damage of the Ge- and Si-based flat window by lasers out-of-band. The experimental results showed that lasers out-of-band can cause film damage and substrate damage to Ge and Si windows. The high-energy laser damage window mechanism mainly manifested as thermal effects. The composite laser damage thresholds for the substrate were an Si window of 21.6 J/cm2 and a Ge window of 3 J/cm2. Compared with continuous laser and long pulse laser experimental results, it was found that the use of long pulse-continuous composite constitution could effectively reduce the damage threshold. Compared to the long-pulse laser, the composite laser could achieve similar damage effects with a smaller energy density.

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Section: Optical Element Substrate Thermal Responsementioning

confidence: 99%

Experimental Study on the Damage of Optical Materials by out of Band Composite Laser

et al. 2020

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“…However, if an electro-optic/infrared system is exposed to laser beam irradiation, the system can easily break down due to cracking or melting damage of the optics and sensor components at a lower power than in the case of a metallic structure. [9][10][11] That is, optical systems are specifically weaker to laser attack.…”

Section: Introductionmentioning

confidence: 99%

Thermal damages on the surface of a silicon wafer induced by a near-infrared laser

Choi

Jhang²

2014

Opt. Eng

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Abstract. Laser-induced thermal damages of a silicon wafer surface subjected to continuous near-infrared laser irradiation were investigated. Silicon wafer specimens were illuminated by a continuous-wave fiber laser beam (1070-nm wavelength) with irradiances from 93 to 186 W∕cm 2 , and the surface morphology of each specimen was analyzed using optical microscopy. With increasing irradiance, straight cracks in the <110> direction appeared first, and partial melting and complete melting were subsequently observed. The mechanism of these laser-induced thermal damages in the silicon wafer surface was discussed with numerical analysis based on the heat transfer and thermoelasticity model. The irradiances initiating the cracking and melting were predicted by determining the irradiances in which the calculated thermal stress and temperature exceeded the corresponding limits of the fracture strength and melting point, respectively. These predictions agreed well with the experimental findings. Laser-induced thermal damages of the silicon wafer surface subjected to a continuous near-infrared laser irradiation were identified based on these investigations. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…In spite of this weakness, analysis of the laser-induced damage in the EO/IR system has been seldom studied. 11 Silicon is widely used as a semiconductor material with numerous applications in EO/IR systems. [12][13][14][15][16] The most common type of fatal, laser-induced thermal damage to silicon is slip damage since it is the first state of permanent damage and can easily result in fracture due to brittleness.…”

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confidence: 99%

Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

Choi

Jhang

2014

Applied Physics Letters

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We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.

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Analysis of optical damage in germanium induced by a continuous wave laser

Cited by 13 publications

References 15 publications

Experimental Study on the Damage of Optical Materials by out of Band Composite Laser

Experimental Study on the Damage of Optical Materials by out of Band Composite Laser

Thermal damages on the surface of a silicon wafer induced by a near-infrared laser

Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

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