Analysis of position-dependent light extraction of GaN-based LEDs

Abstract

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

Optical modeling for LED in mid-field region

“…The algorithm for modeling the light pattern of LEDs starts at figuring out the key important parameters for Monte Carlo simulation [5][6][7]. The parameters include chip dimensions, the location of the active layer, the refractive indices and absorption coefficients of all optical media.…”

GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

“…High external efficiency of GaN-based LEDs can be achieved by the introduction of the texture layer on the top of p-GaN. [1][2][3] Light output can be improved by surface-plasmon resonance. [4,5] However, emission by optical pumping differed from the electroluminescence of an LED, [4] and the microstructured device cannot be used in an LED.…”

2D photonic crystal patterning for high-volume LED manufacturing

“…[3,4] Periodic textured surfaces have been shown to be particularly effective in coupling light out of LEDs. [5] The most advanced example is a nano-structure commonly referred to as a photonic crystal (Fig. 1).…”