2008
DOI: 10.1016/j.apsusc.2008.04.062
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GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

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Cited by 9 publications
(2 citation statements)
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“…1)-3) Furthermore, the photoluminescent characteristics of ZnO particles have been intensively investigated in order to develop highly efficient EL and LED devices. 4),5) These characteristics of ZnO particles greatly depend on the defect structure in the ZnO lattice. 6) For example, the oxygen vacancies in the ZnO lattice produce donor levels with electrons functioning as carriers.…”
Section: Introductionmentioning
confidence: 99%
“…1)-3) Furthermore, the photoluminescent characteristics of ZnO particles have been intensively investigated in order to develop highly efficient EL and LED devices. 4),5) These characteristics of ZnO particles greatly depend on the defect structure in the ZnO lattice. 6) For example, the oxygen vacancies in the ZnO lattice produce donor levels with electrons functioning as carriers.…”
Section: Introductionmentioning
confidence: 99%
“…Lung-Chien Chen [13] deposited ZnO nano-coarse layer on GaN, the results showed that light extraction energy increased by 27.5% on the base of 20 mA. Japanese SCIVAX company etched on sidewall of the chip and interfaces between layers, using nano-printing technology, first coated resin on surface of p-type GaN layer of the LED wafer, and then pressed the silicon template accompanied with a concave-convex pattern in the resin film, ultimately striped on the GaN from the p-type GaN using ion-etching.…”
Section: Design Of Power-type Chipsmentioning
confidence: 99%