Analysis of reactive melt infiltration in the processing of ceramics and ceramic composites

Lattice Boltzmann simulations on the role of channel structure for reactive capillary infiltration

“…The focus is on the effects on fluid flow of surface growth from a supersaturated solution (Kang et al, 2003(Kang et al, , 2004(Kang et al, , 2007Kang, Zhang, Chen, & He, 2002;Lu et al, 2009). The study is motivated by the problem of Si infiltration into C preforms (Bougiouri et al, 2006;Dezellus et al, 2003;Dezellus & Eustathopoulos, 2010;Einset, 1996Einset, , 1998Eustathopoulos et al, 1999;Hillig et al, 1975;Israel et al, 2010;Liu et al, 2010;Messner & Chiang, 1990;Mortensen et al, 1997;Voytovych et al, 2008). Several inconsistencies exist between the experiments and the models, as well as the simulation conditions.…”

“…The motivating problem for our investigation is the reactive infiltration of molten silicon (Si) into carbon (C) (Bougiouri, Voytovych, Rojo-Calderon, Narciso, & Eustathopoulos, 2006;Dezellus & Eustathopoulos, 2010;Dezellus, Hodaj, & Eustathopoulos, 2003;Einset, 1996Einset, , 1998Eustathopoulos, Nicholas, & Drevet, 1999;Hillig, Mehan, Morelock, DeCarlo, & Laskow, 1975;Israel et al, 2010;Liu, Muolo, Valenza, & Passerone, 2010;Messner 302 D. Sergi et al & Chiang, 1990;Mortensen, Drevet, & Eustathopoulos, 1997;Voytovych, Bougiouri, Calderon, Narciso, & Eustathopoulos, 2008). This process is of particular relevance to industrial practices which involve the processing of carbon and graphite materials (Gadow, 2000;Gadow & Speicher, 2000;Krenkel, 2005;Paik et al, 2002;Salamone, Karandikar, Marshall, Marchant, & Sennett, 2008).…”

“…Specifically, ceramization through liquid Si infiltration, or impregnation, is necessary for high-temperature applications such as tribology (Gadow, 2000). In this process, the reaction between Si and C to form silicon carbide (SiC) has been the subject of intense research activity, since it coincides with a wetting transition (Bougiouri et al, 2006;Dezellus et al, 2003;Dezellus & Eustathopoulos, 2010;Einset, 1996Einset, , 1998Eustathopoulos et al, 1999;Hillig et al, 1975;Israel et al, 2010;Liu et al, 2010;Messner & Chiang, 1990;Mortensen et al, 1997;Voytovych et al, 2008). In other words, without this reaction, infiltration would not occur (Bougiouri et al, 2006).…”

“…In other words, without this reaction, infiltration would not occur (Bougiouri et al, 2006). Importantly, the formation of SiC can lead to a thickening of the surface behind the invading front (contact line) (Bougiouri et al, 2006;Einset, 1996Einset, , 1998Israel et al, 2010). Surface growth can result in retardation effects and ultimately hinder the impregnation because of pore obstruction (Bougiouri et al, 2006;Einset, 1996Einset, , 1998Israel et al, 2010;Messner & Chiang, 1990).…”

“…Importantly, the formation of SiC can lead to a thickening of the surface behind the invading front (contact line) (Bougiouri et al, 2006;Einset, 1996Einset, , 1998Israel et al, 2010). Surface growth can result in retardation effects and ultimately hinder the impregnation because of pore obstruction (Bougiouri et al, 2006;Einset, 1996Einset, , 1998Israel et al, 2010;Messner & Chiang, 1990). In the LB framework, the surface reaction is treated as a precipitation process (Kang, Lichtner, & Zhang, 2007;Kang, Zhang, & Chen, 2003;Kang, Zhang, Chen, & He, 2002;Kang, Zhang, Lichtner, & Tsimpanogiannis, 2004;Lu, DePaolo, Kang, & Zhang, 2009;Sergi, Grossi, Leidi, & Ortona, 2014).…”