Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence

Yang, Jiali; Du, Haiyan; Chen, D.S.; Xu, F.; Zhou, Peng; Xu, Jing; Ma, Zhongquan

doi:10.1016/j.matlet.2015.01.105

Cited by 13 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Moreover, from the measurement result, i.e., the luminescence intensity of free charge carriers, the internal separation of the quasi-Fermi levels ΔE F can be derived. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] Especially photoluminescence (PL) is very interesting for the following two reasons. First, PL allows insight into the recombination of photogenerated charge carriers under real operation conditions in contrast to electroluminescence (EL) where recombination of electrically injected charge carriers is investigated in the dark.…”

Section: Introductionmentioning

confidence: 99%

Determination of Free Charge Carrier Luminescence and Quasi‐Fermi Level Separation in Organic Solar Cells via Transient Photoluminescence Measurements

List

Faisst

Heinz

et al. 2023

Advanced Optical Materials

View full text Add to dashboard Cite

The detection of photoluminescence (PL) is extremely valuable for photovoltaic technologies as it provides direct information about the free charge carrier densities and therefore about the separation of the quasi‐Fermi levels (ΔEF). However, for organic solar cells the PL is strongly dominated by photogenerated excitons that in part decay radiatively before they form free charge carriers via dissociation at a donor/acceptor interface. For this reason, it is impossible to deduce the free charge carrier densities and ΔEF directly from the PL signal. To overcome this severe limitation, a new approach is developed that allows disentangling the luminescence of photogenerated excitons from the one of free charge carriers. Due to the large difference in respective lifetimes—for photogenerated excitons it is ≤ ns whereas for free charge carriers it is in the µs‐range—this is achieved by time‐resolved PL measurements. For highly efficient organic solar cells, it is found that ΔEF determined from these PL transients matches perfectly with the electrical voltage. Moreover, the new method also allows for the determination of ΔEF from mere absorber films without electrodes and thus paves the way for a better understanding of organic solar cells.

show abstract

Section: Introductionmentioning

confidence: 99%

Determination of Free Charge Carrier Luminescence and Quasi‐Fermi Level Separation in Organic Solar Cells via Transient Photoluminescence Measurements

List

Faisst

Heinz

et al. 2023

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…For homo-junction solar cells, TRPL is not a single exponential decay curve, and it is influenced by surface recombination, doping and internal electrical field, becoming two-exponential decay or more complex non-exponential decay. 13,14 Internal electrical field in PN junction would modify distributions of carriers significantly. 6,15 Matthias Maiberga has given the full expression of TRPL curve I(t) considering diffusion, drifting, surface recombination, and non-uniform absorption.…”

Section: Introductionmentioning

confidence: 99%

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

Guo

Xiao

et al. 2018

AIP Advances

View full text Add to dashboard Cite

Time resolved photoluminescence (TRPL) is a powerful method to character the behaviors of carriers as it has high time resolution that could reflect the reactions of carriers within nanoseconds. For solar cells, minority carrier lifetime is the most important parameter. TRPL has been used to measure the lifetime for uniform materials. However, for homojunction solar cells, doping distribution and carrier drift make the spectroscopy analysis much difficult. Thus one dimension numerical calculations are used to study the time-dependent photoluminescence (TRPL) decay of GaAs sub-cell in GaInP/GaAs/Ge solar cells. Calculation shows that both lifetime of minorities and light intensities could determine the line shape of TRPL. The bimolecular recombination under high injection modifies the curve from single-exponential to non-single-exponential one. For TRPL of homojunction solar cell, the photoluminescence decay process is not synchronized in all parts, and the decay is fast in emitter but slower in base regions. To get the lifetimes of minority carriers after 1MeV electron irradiation, carrier generation parameter G0 should be fitted by numerical method firstly. The damage factor Kτ=4.8×10-15 cm2/ns is fitted from TRPL results. Photoluminescence spectra (PL) are also used to get Kτ=5.5×10-15 cm2/ns which is similar with the value obtained from TRPL.

show abstract

“…Исследования фотолюминесценции (ФЛ) при низких уровнях непрерывного оптического возбуждения часто используются для оценки кристаллического качества CIGSe [4,6,17,18,21]. Обнаружение стимулированного и лазерного излучения в пленках твердых растворов CIGSe при высоких уровнях импульсного лазерного возбуждения [22] открывает новые возможности оценки их структурного совершенства, так как позволяет произвести сравнительную оценку относительной концентрации свободных неравновесных носителей заряда,…”

Section: Introductionunclassified

Люминесценция и стимулированное излучение поликристаллических пленок Cu(In,Ga)Se-=SUB=-2-=/SUB=-, осажденных методом магнетотронного напыления

Свитенков¹,

Pavlovskii²,

Lutsenko³

et al. 2018

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Обнаружено стимулированное излучение в тонких пленках твердых растворов Cu(In,Ga)Se 2 , сформированных методом магнетронного напыления на слое фторида натрия, осаждeнном на слой молибдена на стеклянной подложке. Определены структурные и оптические характеристики пленок с использованием методов сканирующей электронной микроскопии, рентгеноспектрального локального микроанализа, рентгеноструктурного анализа и низкотемпературной (T = 10 K) люминесценции в интервале уровней возбуждения 1.6−75 кВт/см 2 наносекундными импульсами азотного лазера. Порог стимулированного излучения составил ∼ 25 кВт/см 2 . Сравнительный анализ излучения тонких пленок Cu(In,Ga)Se 2 указывает на то, что введение натрия приводит к значительному улучшению кристаллического качества -уменьшению плотности энергетических состояний в хвостах зон и концентрации безызлучательных центров рекомбинации.

show abstract

Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence

Cited by 13 publications

References 19 publications

Determination of Free Charge Carrier Luminescence and Quasi‐Fermi Level Separation in Organic Solar Cells via Transient Photoluminescence Measurements

Determination of Free Charge Carrier Luminescence and Quasi‐Fermi Level Separation in Organic Solar Cells via Transient Photoluminescence Measurements

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

Люминесценция и стимулированное излучение поликристаллических пленок Cu(In,Ga)Se-=SUB=-2-=/SUB=-, осажденных методом магнетотронного напыления

Contact Info

Product

Resources

About