Analysis of recombination processes in polytype gallium arsenide nanowires

Vulic, Natasa; Goodnick, Stephen M.

doi:10.1016/j.nanoen.2018.11.030

Cited by 4 publications

(1 citation statement)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using this technique, single NWs are contacted in a scanning electron microscope (SEM) equipped with a piezocontrolled tungsten probe, enabling to measure EBIC and IV-characteristics. Time-resolved photoluminescence (TRPL) is often used to study photovoltaic materials [26,27] and especially the surface passivation thereof [14,15]. Both EBIC and TRPL enable to obtain information about the photovoltaic quality of NWs rapidly without the need of any time-consuming processing.…”

Section: Introductionmentioning

confidence: 99%

Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires

et al. 2021

View full text Add to dashboard Cite

Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating POx/Al2O3 shell in contrast to results using SiOx. We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited POx/Al2O3 has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices.

show abstract