2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC) 2012
DOI: 10.1109/epepemc.2012.6397205
|View full text |Cite
|
Sign up to set email alerts
|

Analysis of rectifier topologies for automotive HV to LV phase shift ZVT DC/DC converter

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
4
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 9 publications
(4 citation statements)
references
References 8 publications
0
4
0
Order By: Relevance
“…The blocking voltage of the secondary side devices is two times the transformer reflected secondary voltage for center tapped and current doubler, or one time the transformer reflected secondary voltage for full bridge. However, the effective R DS(on) is twice as big for full bridge rectification [22]. Therefore, current doubler and center tapped rectifiers are the most appropriate for low voltage and high current applications.…”
Section: Secondary Side Rectifier LV Mosfetsmentioning
confidence: 99%
See 1 more Smart Citation
“…The blocking voltage of the secondary side devices is two times the transformer reflected secondary voltage for center tapped and current doubler, or one time the transformer reflected secondary voltage for full bridge. However, the effective R DS(on) is twice as big for full bridge rectification [22]. Therefore, current doubler and center tapped rectifiers are the most appropriate for low voltage and high current applications.…”
Section: Secondary Side Rectifier LV Mosfetsmentioning
confidence: 99%
“…A lower voltage class is enabled by a proper design of the transformer turns ratio, a reduction in the leakage combined with a big external resonant inductance and clamping diodes [29]. Any additional overshoot above the nominal blocking voltage would require further increasing the maximum limits of the blocking voltage capabilities of the rectification devices; or alternatively to use clamping or snubbering mechanisms that bring additional power losses, complexity and costs [22,25]. Furthermore, it is a common practice in the design of switched mode power supplies (SMPS), to limit the maximum stress on the components (voltage, current, temperature) to a rated percentage of their safe maximum limits under any normal working conditions of the converter [40].…”
Section: Secondary Side Srs LV Mosfetsmentioning
confidence: 99%
“…The idea of a reconfigurable topology based on the ZVT PS FB converter in this paper is motivated by several different conclusions from previous work (26) (27) . First, it has been shown in (26) that the wide range of operating conditions does not allow to design and utilize the ZVT PS FB converter with its full potential.…”
Section: Proposed Reconfiguration Of Zvt Ps Fb Convertermentioning
confidence: 99%
“…First, it has been shown in (26) that the wide range of operating conditions does not allow to design and utilize the ZVT PS FB converter with its full potential. Except the negative effect on the losses in the HV-side H-bridge, it has been concluded in (27) which dealt with the choice of the rectifier stage, that the blocking voltage rating of rectifier switches is negatively affected as well. For example, the full bridge rectifier compared to the full wave rectifier has the advantage of the lower blocking voltage rating of switches but at the same time the disadvantage of higher number of components.…”
Section: Proposed Reconfiguration Of Zvt Ps Fb Convertermentioning
confidence: 99%