Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules

Schulz, Stefan; O’Reilly, Eoin P.

doi:10.1007/978-1-4614-8130-0_6

Cited by 1 publication

(1 citation statement)

References 92 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, the growth of III-nitride nanosheets is not easy to implement because the crystallisation of GaN, InN and AlN is usually in wurtzite or zinc-blende structures. These structures have strong covalent bonding within the crystal [125,126] and a strong built-in electrostatic field caused by spontaneous and piezoelectric polarisation along the [0001] direction [127], making it easy to form 3D islands in the growth process. These materials are fundamentally different from easily cleaved vdW solids due to sp 3 hybridisation among all atoms, causing an unstable monolayer structure with dangling bonds on the surface [128].…”

Section: Growth Of Iii-nitride Nanosheetsmentioning

confidence: 99%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

show abstract