Modeling of Systems and Processes

2018

DOI: 10.12737/article_5b574c7bc93924.16311213

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Analysis of resistance to heavy charged particles radiation-hardened microcontroller, made by domestic technology

М. Арзамасцев¹,

M. Arzamascev²,

А. Яньков³

et al.

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Cited by 5 publications

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Results of Research of Rectifier Diodes on Resistance

Яньков¹,

et al. 2019

Modeling of Systems and Processes

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The article describes the study of rectifier diodes for resistance to special factors. The direct reverse current Iobr and the forward voltage of the diode Uobr were considered as a criterion for the performance of diodes. Based on the results of the calculation and experimental evaluation of the resistance of rectifier diodes to special factors, graphical dependences of the reverse current and direct voltage on the value of the special factor are constructed.

Results of Research of Rectifier Diodes on Resistance

Яньков¹,

et al. 2019

Modeling of Systems and Processes

View full text Add to dashboard Cite

The article describes the study of rectifier diodes for resistance to special factors. The direct reverse current Iobr and the forward voltage of the diode Uobr were considered as a criterion for the performance of diodes. Based on the results of the calculation and experimental evaluation of the resistance of rectifier diodes to special factors, graphical dependences of the reverse current and direct voltage on the value of the special factor are constructed.

Methods for Ensuring Resistance to HCP for Control Logic and Static Memory of the Microprocessor in the Design

¹

,

²

2020

Modeling of Systems and Processes

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The article describes methods for ensuring resistance to heavy charged particles (HCP) of the RAM block of the microprocessor. A description of the implementation and a block diagram of static memory based on dummy blocks is given. The paper considers methods of combating the biopolar effect, which are aimed at controlling the potential of the transistor body and reducing the resistance. The dependence of the critical charge of a SOI-memory cell the gain of a parasitic biopolar transistor is modeled. To increase the fault tolerance of combinational circuits consisting of control logic and decoder blocks, redundancy is applied at the level of individual valves.

Development of a Test Crystal in the Design of Cmos Technology Chips

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²

,

³

et al. 2020

Modeling of Systems and Processes

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