Analysis of resonant MEMS based on high‐electron mobility transistor‐like structure

Abstract

We develop an analytical model for the resonant MEMS with electrical readout in which electrostatically actuated micromachined cantilever oscillates over the two‐dimensional electron gas (2DEG) channel and controls the current flowing along it. The model accounts for the impact of electric field fringing on spatial distribution of sheet electron density along the 2DEG channel.Nonuniform spatial distribution of sheet electron density results in distributed resistance of the 2DEG channel. Amplitude of the ac component of the source‐drain current is evaluated and compared with that one estimated using ideal model without fringing. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)