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Simple analytical model is developed to evaluate spatial distribution of sheet electron density in the channel of the high-electron mobility transistor (HEMT)-like structure periodically modulated by the bias voltages applied to interdigitated gate. Resonant frequencies of plasma oscillations excited in the two-dimensional electron gas (2DEG) channel of such structures are evaluated in the ideal and realistic situations. The realistic model accounts for the ungated regions which due to nonideality of gate contact—2DEG channel system can be also affected by the gate bias voltages. It is shown that plasma resonances in realistic structures with fringed ungated regions deviate from those predicted by the ideal model. The model developed can be used to interpret the terahertz plasmon spectra measured experimentally.

We develop an analytical model for the resonant MEMS with electrical readout in which electrostatically actuated micromachined cantilever oscillates over the two‐dimensional electron gas (2DEG) channel and controls the current flowing along it. The model accounts for the impact of electric field fringing on spatial distribution of sheet electron density along the 2DEG channel.Nonuniform spatial distribution of sheet electron density results in distributed resistance of the 2DEG channel. Amplitude of the ac component of the source‐drain current is evaluated and compared with that one estimated using ideal model without fringing. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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An analytical model of a resonant micro-electromechanical system(MEMS) with a high-electron mobility transistor (HEMT)-like structure and an array of resonant cantilevers over its two-dimensional electron gas (2DEG) channel is developed. To account for impact of fringing, spatial distributions of the electric field and sheet electron density at the surface of the HEMT channel are calculated in parametric form. Resistance of the 2DEG channel and frequency-dependent ac amplitude of the source--drain current are derived. The developed model allows evaluation of impact of fringing electric field on output source-drain current for any different number of cantilevers in the array at different spacing between them and can be used for device optimization.