Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers

Lü, Wei; Wang, Lingquan; Gu, Siyuan; Aplin, David P. R.; Estrada, Daniel; Yu, Paul K. L.; Asbeck, P.M.

doi:10.1109/ted.2011.2146254

Cited by 27 publications

(11 citation statements)

References 26 publications

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“…This NC behavior can be ascribed to reverse leakage current. An InGaN surface layer can suppress the reverse leakage current [6], so the NC in InGaN/GaN sample is not that obvious as that in GaN sample.…”

Section: Experiments Proceduresmentioning

confidence: 97%

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

Cheng

Han

Lin

et al. 2011

2011 Academic International Symposium on Optoelectronics and Microelectronics Technology

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The frequency dependence of capacitance-voltage (C-V) characteristics of Hg/GaN and Hg/InGaN/GaN Schottky contacts are investigated for 1KHz, 10KHz and 1MHz at room temperature. An anomalous peak in the C-V curves of Hg/GaN sample is observed but no peak for the Hg/InGaN/GaN sample occurs. The interface states, series resistance and minoritycarrier injection would be the origin of this anomalous peak. The interface states density is calculated through C-V measurement of high and low frequencies, and a four-element circuit model is proposed to determine the series resistance. In addition, energy bind structures are taken into account. The three aspects above are analyzed for both two samples, and the origin of the anomalous peak is attributed to the series resistance and minority-carrier injection rather than the interface states.

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Section: Experiments Proceduresmentioning

confidence: 97%

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

Cheng

Han

Lin

et al. 2011

2011 Academic International Symposium on Optoelectronics and Microelectronics Technology

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“…A thin InGaN surface layer was proved previously to be effective in reducing the leakage current and increasing breakdown voltage by suppressing the electron tunneling through the Schottky barrier [3]. Defects reduction using near atmospheric pressure MOCVD growth for GaN buffer layers has been realized and found to be effective in reducing leakage current as well [5,6]. The fabrication process is important for achieving low leaky devices too, e.g., sidewall passivation, guard ring and field plate structures.…”

Section: Considerations For Achieving Low Reserve Leakage Currentmentioning

confidence: 99%

“…Colored dots are measurement data and solid lines are calculated curves based on a tunneling model[5].…”

mentioning

confidence: 99%

Critical design considerations for GaN-based microwave power varactors

Lü

Wang

et al. 2012

2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)

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In this paper, we demonstrate the critical design considerations for GaN-based microwave power varactors for the purpose of achieving high breakdown voltage, high Q-factor and high linearity. The extraction of these parameters from a real GaN-based power varactor diode is also presented. High values of these parameters are obtained, which is critical for the applications in the wireless base-station communications.

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“…We have previously demonstrated GaN large-area varactors that achieve highbreakdown voltage. The addition of a thin InGaN surface layer was shown to increase the diode breakdown voltage and reduce the leakage current under high reverse bias [3]. In this work, InGaN/GaN Schottky-diode microwave varactors with Q > 100 at 1 GHz, breakdown voltage > 120 V and OIP3 > 71 dBm are reported.…”

mentioning

confidence: 96%

“…All samples were grown using a Thomas Swan CCS 3×2" MOCVD system. We use GaN buffer layers grown near atmospheric pressure to reduce dislocation formation, thus further improve the leakage current and breakdown voltage [3]. Representative I-V and C-V curves for GaN-only and InGaN/GaN samples are shown in Fig.…”

mentioning

confidence: 99%

InGaN/GaN microwave varactors with high Q, high-breakdown voltage and high linearity

Lü

Wang

et al. 2011

2011 International Semiconductor Device Research Symposium (ISDRS)

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Introduction: Semiconductor varactors are receiving increasing attention because of their potential to provide adaptive and tunable characteristics for the front-end of wireless communication systems, enabling efficient multi-band and software-defined radios. For basestation applications, Q > 100, breakdown voltage > 100 V and OIP3 > 65 dBm are required. The combination of high Q and high-breakdown voltage requires semiconductors with high mobility and high-breakdown electric field [1]; GaN with a mobility of >~ 500 cm 2 /Vsec and a breakdown electric field of 2.5 MV/cm is a promising candidate. SiC-based varactors have also been recently reported [2]. We have previously demonstrated GaN large-area varactors that achieve highbreakdown voltage. The addition of a thin InGaN surface layer was shown to increase the diode breakdown voltage and reduce the leakage current under high reverse bias [3]. In this work, InGaN/GaN Schottky-diode microwave varactors with Q > 100 at 1 GHz, breakdown voltage > 120 V and OIP3 > 71 dBm are reported. To the best of our knowledge, the combination of Q, voltage handling capability and OIP3 represents advancement from any other reported varactors.

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Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers

Cited by 27 publications

References 26 publications

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

Critical design considerations for GaN-based microwave power varactors

InGaN/GaN microwave varactors with high Q, high-breakdown voltage and high linearity

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