Analysis of sapphire- chemical mechanical polishing using digital image processing

Uneda, Michio; Takano, Keiichi; Koyama, Koji; Aida, Hideo; Ishikawa, Ken-ichi

doi:10.1299/mej.15-00509

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…However, there is a strong correlation between the friction coefficient and the removal rate, which is similar to the results of previous reports. 18,19,32,33 Multiple regression analysis 34 was conducted using the platen load current (C p ) and head load current (C h ) as explanatory variables, and the removal rate (R R ) and friction coefficient (F c ) as objective variables. In both cases, the platen load current and head load current satisfied the significance level, and Eqs.…”

Section: Resultsmentioning

confidence: 99%

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Uneda¹,

Ota²,

Takiguchi³

et al. 2023

ECS J. Solid State Sci. Technol.

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Herein, a method for predicting real-time removal rate and friction coefficient between the pad and substrate during chemical mechanical polishing was investigated using only the load currents of two motors of a polisher. Polishers for semiconductor devices are equipped with various sensors, enabling a real-time prediction of the removal amount. The polishers used to polish substrates are not usually equipped with sensors, and the polishing time is fine-tuned by skilled-technicians to achieve the desired substrate thickness. However, since every polisher has some motors, predicting the removal rate and friction coefficient using only the real-time data produced by these motors would be beneficial. This study attempts to predict the removal rate and friction coefficient in long-time polishing using a training dataset obtained from short-time polishing. Results showed that by performing extremely low-pressure, long-time polishing to understand the polisher characteristics and then subtracting the polisher characteristics from the motor information during long-time polishing, highly accurate predictions of the removal rate and friction coefficient within ~94% in percent match (prediction accuracy) between the experimental and predicted values can be obtained. Furthermore, slurry degradation during CMP can be monitored using this prediction method.

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Section: Resultsmentioning

confidence: 99%

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Uneda¹,

Ota²,

Takiguchi³

et al. 2023

ECS J. Solid State Sci. Technol.

Self Cite

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show abstract

“…The gap between wafer and pad depends on the loading pressure applied on the carrier. 4,5 To calculate the MRR in the CMP process, the following Preston empirical equation is used to describe the CMP performance of MRR for a long period of time [6][7][8][9][10]…”

mentioning

confidence: 99%

Effective Particle Analysis on Wafer in the EKF-CMP System

Mai

Chen

et al. 2021

ECS J. Solid State Sci. Technol.

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This study aims to develop a three-dimensional electro-osmosis flow (3D-EOF) cell model for effective particle analysis on the wafer at steady-state under electro-kinetic force (EKF) assistance during chemical mechanical polishing/planarization (CMP). A simulation software is used to simulate the abrasive particle motion with three functional modules including the electric current, the laminar flow, and the particle trajectories. Parameter designs of various simulation conditions such as electrode gap spacing, direct current voltages, and polishing pad thickness have been investigated to analyze the motion of silica abrasive nanoparticles due to EOF. Simulation results of the EOF velocity of slurry flow circulation in different conditions have compared with theoretical calculation results. Results have shown that the total number of effective particles intensifies significantly with increasing electrode voltage, but decreases in both cases as raising electrode gap and larger pad thickness. Experimental results of EKF-CMP process can improve 25.03%, 2.52 nm, 1.39% for material removal rate (MRR), surface roughness, non-uniformity, respectively. It can explain that the wafer surface polishing qualification is significantly by motion of effectual abrasive particles. Results of this study can be extended to contribute to improvement and optimization of EKF-CMP process for Copper CMP process used in IC fabrication.

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Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an evanescent field

Uneda

Kubo

Hatatani

et al. 2023

Precision Engineering

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Analysis of sapphire- chemical mechanical polishing using digital image processing

Cited by 5 publications

References 9 publications

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Effective Particle Analysis on Wafer in the EKF-CMP System

Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an evanescent field

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