Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

“…In addition, in case of an ideal diode, the value of the ideality factor n is equal to 1, while for the not ideal diode, the n value is higher than 1 (n > 1). In case of Schottky diode, assuming that the current is due to the thermionic emission TE, the relation between the applied forward bias and the current can be given by [4,6,8,13]:…”

“…Many research groups investigated n-GaN-based metal-semiconductor by using different contact schemes for instance Ravinandan et al [3] performed analysis of electronic parameters * E-mail: 3ali39@gmail.com and temperature-dependent properties of Pd/Au/n-GaN Schottky diodes in a wide temperature range of 90 K to 410 K. Reddy et al [4] reported electrical properties and current transport mechanisms of Au/BaTiO 3 /n-GaN that have been investigated by (I-V) and (C-V) measurements at room temperature. Yildirim et al [5] studied the C-V and I-V characteristics of Ni/n-GaN Schottky diodes in different temperatures from 80 K to 400 K. Asha et al [6] carried out an analysis of electronic parameters of V/p-type GaN Schottky junction at low temperatures in the range of 120 K to 280 K.…”