A Temperature Sensor Based on Al/p-Si/CuCdO2/Al Diode for Low Temperature Applications

Dere, A.; TataroŸğlu, A.; Al‐Sehemi, Abdullah G.; Eren, Haydar; Soylu, M.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1007/s11664-020-07989-z

Cited by 8 publications

(1 citation statement)

References 36 publications

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“…This case may be described by the lateral inhomogeneity of BHs. [23][24][25][26][27][28][29][30] According to GD model, the formed of BH between semiconductor and Schottky contact hasn't homogenous and a mean-BH ECS Journal of Solid State Science and Technology, 2023 12 083010 ( B0 Φ ¯) is defined in Eq. 9a, depending on the standard-deviation S (σ ) of BH.…”

Section: Resultsmentioning

confidence: 99%

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan,

Tataroglu,

Altındal-Yerişkin

2023

ECS J. Solid State Sci. Technol.

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Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, B0) increases with increasing temperature. The value of Richardson constant (A*) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34x10-3 A.cm-2K-2, respectively. This low A* value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, Bo vs n and Bo vs q/(2kT) curves were illustrated. The  ̅B value was found as 1.19 eV from the linear ΦB0 vs n plot for ideal case (n=1). The mean-value of BH ( ) and standart deviation (σs) values were found from the Bo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σs, RP was modified and then  ̅B0 and A* values were found as 1.128 eV and 108.88 Acm-2K-2, respectively, and this value of A*very close to its theoretical value (=112 Acm-2K-2). The surface state density (Nss) were also obtained from the forward bias IV data for three-temperatures.

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Section: Resultsmentioning

confidence: 99%

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan,

Tataroglu,

Altındal-Yerişkin

2023

ECS J. Solid State Sci. Technol.

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Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Ejderha

Türüt

2021

J. Electron. Mater.

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The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Durmuş

Tataroğlu

Altındal

et al. 2022

Current Applied Physics

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A Temperature Sensor Based on Al/p-Si/CuCdO2/Al Diode for Low Temperature Applications

Cited by 8 publications

References 36 publications

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

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A Temperature Sensor Based on Al/p-Si/CuCdO2/Al Diode for Low Temperature Applications

Cited by 8 publications

References 36 publications

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

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Product

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Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range