Analysis of Segmented Traveling-Wave Optical Modulators

Li, G.L.; Mason, T. G. Beck; Yu, Paul K. L.

doi:10.1109/jlt.2004.831179

Cited by 53 publications

(43 citation statements)

References 25 publications

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“…Performance, EO bandwidth and impedance matching may vary due to deviation from these levels during the fabrication process. The presence of the reverse biased p-n-junction can be incorporated into the TML circuit model of a quasi TEM mode by transforming the series RjCj elements into a parallel combination [12,13]. The depletion capacitance and resistance, as shown in Fig.…”

Section: A P-n-junctionmentioning

confidence: 99%

“…Coplanar waveguide (CPW) and coplanar strip (CPS) transmission line (TML) are commonly used as traveling-wave electrodes for high-speed modulators [11][12][13][14][15]. The CPS is considered in this case as our traveling wave electrode because of its compact geometry in comparison to CPW.…”

Section: Tw Electrodementioning

confidence: 99%

“…Under low-loss conditions, the required unloaded characteristic impedance, Z0,u, can be calculated in terms of the characteristic impedance of the loaded line, Z0,L, (impedance of interest) as [13]:…”

Section: B Characteristic Impedance Of Tmlmentioning

confidence: 99%

“…To calculated the unloaded characteristic impedance, Z0,u, and the effective index, nRF,u, a CPS transmission line is designed by HFSS while using T-shaped extensions to reduce the RF phase velocity [12,13] ( dimensions are indicated in Fig. 4b).…”

Section: B Characteristic Impedance Of Tmlmentioning

confidence: 99%

“…Finally, we compare our results with the large signal performance predicted by the small signal model with a linear response assumption [2,13]. For this comparison, we use VAC = 6.5 Vpp and VDC = 3 V for a modulator with a 6 mm phase shifter and assume no fabrication error and bias at the quadrature point.…”

Section: E Comparison Of Small and Large Signal Modelsmentioning

confidence: 99%

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Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

Bahrami

Sepehrian

Park

et al. 2016

J. Lightwave Technol.

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Abstract-Silicon photonic modulators have strong nonlinear behavior in phase modulation and frequency response, which needs to be carefully addressed when they are used in high-capacity transmission systems. We demonstrate a comprehensive model for depletion-mode Mach-Zehnder modulators (MZMs) on silicon-on-insulator, which provides a bridge between device design and system performance optimization. Our methodology involves physical models of p-n-junction phase-shifters and traveling-wave electrodes, as well as circuit models for the dynamic microwave-light interactions and time-domain analysis. Critical aspects in the transmission line design for high-frequency operation are numerically studied for a case of p-n-junction loaded coplanar-strip electrode. The dynamic interaction between light and microwave is simulated using a distributed circuit model solved by the finite-difference time-domain method, allowing for accurate prediction of both small-signal and large-signal responses. The validity of the model is confirmed by the comparison with experimental results for a series push-pull MZM with a 6 mm phase shifter. The simulation shows excellent agreement with experiment for high-speed operation up to 46 Gbps. We show that this time-domain model can well predict the impact of the nonlinear behavior on the large-signal response, in contrast to the poor prediction from linear models in the frequency domain.

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Section: A P-n-junctionmentioning

confidence: 99%

Section: Tw Electrodementioning

confidence: 99%

Section: B Characteristic Impedance Of Tmlmentioning

confidence: 99%

Section: B Characteristic Impedance Of Tmlmentioning

confidence: 99%

Section: E Comparison Of Small and Large Signal Modelsmentioning

confidence: 99%

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Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

Bahrami

Sepehrian

Park

et al. 2016

J. Lightwave Technol.

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Silicon Photonics Research and Manufacturing Using a 300-mm Wafer Platform

Bœuf

Carpentier

Baudot

et al. 2016

Topics in Applied Physics

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High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators

Lopez

Rito

Mičušík

et al. 2015

Analog Integr Circ Sig Process

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A hybrid arrangement for an optical transmitter sub-system comprising a linear driver fabricated in IHP SiGe 0.13 A mu m BiCMOS technology with an InP segmented Mach-Zehnder modulator is described. The proposed scheme, with direct interface to the digital to analog converter, is suitable for coherent high order modulation formats intended for data transmission over optical fiber at a wavelength of 1550 nm. In this paper, a partial prototype, consisting of a single driver core and modulator segment is demonstrated. The driver core features an output differential voltage of 2.5 Vpp, a gain of 9 dB and a 3 dB bandwidth of 32 GHz. Linearity is evaluated through total harmonic distortion measurements. With on-off-keying modulation, electro-optical eye diagram measurements of the single segment demonstrate successful operation up to 40 Gb/s data rate. While exhibiting clear capability for high speed operation, these results serve also to explore the boundaries of the proposed hybrid configuration

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Analysis of Segmented Traveling-Wave Optical Modulators

Cited by 53 publications

References 25 publications

Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

Silicon Photonics Research and Manufacturing Using a 300-mm Wafer Platform

High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators

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